PMEG2015EV,115 NXP Semiconductors, PMEG2015EV,115 Datasheet

DIODE SCHOTTKY 20V 1.5A SOT666

PMEG2015EV,115

Manufacturer Part Number
PMEG2015EV,115
Description
DIODE SCHOTTKY 20V 1.5A SOT666
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PMEG2015EV,115

Package / Case
SS Mini-6 (SOT-666)
Voltage - Forward (vf) (max) @ If
660mV @ 1.5A
Voltage - Dc Reverse (vr) (max)
20V
Current - Average Rectified (io)
1.5A (DC)
Current - Reverse Leakage @ Vr
50µA @ 15V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F
25pF @ 5V, 1MHz
Mounting Type
Surface Mount
Product
Schottky Diodes
Peak Reverse Voltage
20 V
Forward Continuous Current
1.5 A
Max Surge Current
10 A
Configuration
Single
Forward Voltage Drop
0.66 V
Maximum Reverse Leakage Current
50 uA
Operating Temperature Range
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934057624115
PMEG2015EV T/R
PMEG2015EV T/R
Product data sheet
Supersedes data of 2003 May 21
DATA SHEET
PMEG2015EV
Low V
diode
F
MEGA Schottky barrier
DISCRETE SEMICONDUCTORS
M3D744
2003 Jun 03

Related parts for PMEG2015EV,115

PMEG2015EV,115 Summary of contents

Page 1

DATA SHEET PMEG2015EV Low V MEGA Schottky barrier F diode Product data sheet Supersedes data of 2003 May 21 DISCRETE SEMICONDUCTORS M3D744 2003 Jun 03 ...

Page 2

... NXP Semiconductors Low V MEGA Schottky barrier diode F FEATURES • Forward current: 1.5 A • Reverse voltage • Very low forward voltage • Ultra small plastic SMD package • Flat leads: excellent coplanarity and improved thermal behaviour. APPLICATIONS • Low voltage rectification • High efficiency DC-DC conversion • ...

Page 3

... NXP Semiconductors Low V MEGA Schottky barrier diode F ELECTRICAL CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER V continuous forward voltage F I continuous reverse current R C diode capacitance d Notes 1. Only valid if pins 1, 2 and 5, 6 are soldered 300 μs; δ = 0.02. 2. Pulse test: t ...

Page 4

... NXP Semiconductors Low V MEGA Schottky barrier diode F GRAPHICAL DATA 4 10 handbook, halfpage I F (mA (1) (2) ( − 0.2 = 125 °C. (1) T amb = 85 °C. (2) T amb = 25 °C. (3) T amb Fig.2 Forward current as a function of forward voltage; typical values. 80 handbook, halfpage C d (pF ° MHz; T amb Fig ...

Page 5

... NXP Semiconductors Low V MEGA Schottky barrier diode F PACKAGE OUTLINE Plastic surface mounted package; 6 leads pin 1 index DIMENSIONS (mm are the original dimensions) UNIT 0.6 0.27 0.18 1.7 mm 0.5 0.17 0.08 1.5 OUTLINE VERSION IEC SOT666 2003 Jun scale 1.3 1.7 0.3 1.0 ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

Related keywords