PMEG2015EV,115 NXP Semiconductors, PMEG2015EV,115 Datasheet - Page 2

• Manufacturer Part Number: PMEG2015EV,115
• Description: DIODE SCHOTTKY 20V 1.5A SOT666
• Manufacturer: NXP Semiconductors

Specifications of PMEG2015EV,115

• Package / Case: SS Mini-6 (SOT-666)
• Voltage - Forward (vf) (max) @ If: 660mV @ 1.5A
• Voltage - Dc Reverse (vr) (max): 20V
• Current - Average Rectified (io): 1.5A (DC)
• Current - Reverse Leakage @ Vr: 50µA @ 15V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 25pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 20 V
• Forward Continuous Current: 1.5 A
• Max Surge Current: 10 A
• Configuration: Single
• Forward Voltage Drop: 0.66 V
• Maximum Reverse Leakage Current: 50 uA
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934057624115; PMEG2015EV T/R; PMEG2015EV T/R

NXP Semiconductors
FEATURES
• Forward current: 1.5 A
• Reverse voltage: 20 V
• Very low forward voltage
• Ultra small plastic SMD package
• Flat leads: excellent coplanarity and improved thermal
APPLICATIONS
• Low voltage rectification
• High efficiency DC-DC conversion
• Switch mode power supply
• Inverse polarity protection
• Low power consumption applications.
DESCRIPTION
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier diode with an integrated guard ring for
stress protection, encapsulated in a SOT666 ultra small
SMD plastic package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Only valid if pins 3 and 4 are connected in parallel.
2003 Jun 03
V
I
I
I
T
T
T
SYMBOL
F
FSM
FRM
behaviour.
stg
j
amb
R
Low V
F
continuous reverse voltage
continuous forward current
non-repetitive peak forward current
repetitive peak forward current
storage temperature
junction temperature
operating ambient temperature
MEGA Schottky barrier diode
PARAMETER
T
t
t
p
p
s
= 8 ms square wave; note 1
= 1 ms; δ = ≤ 0.25
< 55 °C
2
PINNING
handbook, halfpage
CONDITIONS
Marking code: F5.
Fig.1
Simplified outline (SOT666 and symbol).
6
1
PIN
1
2
3
4
5
6
5
2
3
4
−
−
−
−
−65
−
−65
MIN.
cathode
cathode
anode
anode
cathode
cathode
1, 2
5, 6
PMEG2015EV
DESCRIPTION
Product data sheet
20
1.5
10
4.5
+150
150
+125
MAX.
MHC310
3, 4
V
A
A
A
°C
°C
°C
UNIT