PMEG6010ER,115 NXP Semiconductors, PMEG6010ER,115 Datasheet - Page 4

• Manufacturer Part Number: PMEG6010ER,115
• Description: SCHOTTKY RECT 60V 10A SOD128
• Manufacturer: NXP Semiconductors

Specifications of PMEG6010ER,115

• Package / Case: SOD-128 Flat Leads
• Voltage - Forward (vf) (max) @ If: 530mV @ 1A
• Voltage - Dc Reverse (vr) (max): 60V
• Current - Average Rectified (io): 1A (DC)
• Current - Reverse Leakage @ Vr: 60µA @ 60V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 120pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 60 V
• Forward Continuous Current: 1 A
• Max Surge Current: 50 A
• Configuration: Single
• Forward Voltage Drop: 0.53 V
• Maximum Reverse Leakage Current: 60 uA
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934061463115

NXP Semiconductors
PMEG6010ER_1
Product data sheet
Fig 1.
Fig 2.
Z
Z
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
10
10
−1
−1
1
1
3
2
3
2
10
10
FR4 PCB, standard footprint
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
FR4 PCB, mounting pad for cathode 1 cm
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
−3
−3
duty cycle =
duty cycle =
0.25
0.02
0.25
0.02
0.5
0.1
0.5
0.1
1
0
1
0
0.75
0.33
0.05
0.01
0.2
0.75
0.33
0.05
0.01
0.2
10
10
−2
−2
All information provided in this document is subject to legal disclaimers.
10
10
−1
−1
2
Rev. 01 — 9 March 2010
1
1
1 A low V
10
10
F
MEGA Schottky barrier rectifier
PMEG6010ER
10
10
2
2
t
t
p
p
© NXP B.V. 2010. All rights reserved.
(s)
(s)
006aab362
006aab363
10
10
3
3
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