RB050L-60TE25 Rohm Semiconductor, RB050L-60TE25 Datasheet - Page 2

• Manufacturer Part Number: RB050L-60TE25
• Description: DIODE SCHOTTKY 60V 3A PMDS
• Manufacturer: Rohm Semiconductor

Specifications of RB050L-60TE25

• Voltage - Forward (vf) (max) @ If: 560mV @ 3A
• Voltage - Dc Reverse (vr) (max): 60V
• Current - Average Rectified (io): 3A
• Current - Reverse Leakage @ Vr: 100µA @ 60V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: SOD-106, PMDS
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -

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RB050L-60
1000
0.01
0.52
0.51
0.49
0.48
0.47
0.46
0.1
100
300
250
200
150
100
10
0.5
50
10
1
0
1
0
1
Ta=125C
0.1
FORWARD VOLTAGE：V
V
I
FSM
F
Ta=75C
V
AVE:207.4A
-I
I
FSM
F
F
-t CHARACTERISTICS
0.2
DISPERSION MAP
CHARACTERISTICS
DISRESION MAP
TIME:t(ms)
AVE:0.4884V
0.3
10
Ifsm
0.4
Ifsm
Ta=25C
8.3ms
Ta=-25C
F
0.5
(V)
Ta=25C
n=50pcs
1cyc
t
I
F
=3A
0.6
100
10000
0.001
1000
1000
0.01
100
50
40
30
20
10
100
100
0.1
90
80
70
60
50
40
30
20
10
10
0
0.1
10
0
1
1
0.001
0
Mounted on epoxy board
10
REVERSE VOLTAGE：V
Rth-t CHARACTERISTICS
V
R
trr DISPERSION MAP
-I
I
R
AVE：25.6ns
20
R
DISPERSION MAP
0.1
AVE：25.93μA
CHARACTERISTICS
TIME:t(s)
2/3
30
IM=100mA
1ms
40
10
Ta=125C
Ta=-25C
300us
Ta=75C
Ta=25C
n=20pcs
Irr=0.1I
Ta=25C
I
I
Ta=25C
n=50pcs
F
R
V
R
=0.1A
=0.1A
50
R
(V)
Rth(j-c)
Rth(j-a)
=60V
I
F
R
=100mA
time
60
1000
1000
300
250
200
150
100
650
640
630
620
610
600
590
580
570
560
550
100
5
4
3
2
1
0
50
10
0
1
0
1
0
Sin(θ＝180)
I
FSM
FORWARD CURRENT：Io(A)
REVERSE VOLTAGE:V
5
V
Io-Pf CHARACTERISTICS
1
-CYCLE CHARACTERISTICS
R
AVERAGE RECTIFIED
-Ct CHARACTERISTICS
NUMBER OF CYCLES
Ct DISPERSION MAP
10
D=1/2
AVE:597.5pF
2
15
10
2011.04 - Rev.A
Ifsm
3
20
Data Sheet
f=1MHz
R
8.3ms
(V)
Ta=25C
n=20pcs
f=1MHz
V
1cyc
25
R
4
=0V
8.3ms
DC
30
100
5