IDB30E120 Infineon Technologies, IDB30E120 Datasheet - Page 4

• Manufacturer Part Number: IDB30E120
• Description: DIODE 1200V 50A TO263-3
• Manufacturer: Infineon Technologies

Specifications of IDB30E120

• Package / Case: SC-70-6, SC-88, SOT-363
• Voltage - Forward (vf) (max) @ If: 2.15V @ 30A
• Voltage - Dc Reverse (vr) (max): 1200V (1.2kV)
• Current - Average Rectified (io): 50A (DC)
• Current - Reverse Leakage @ Vr: 100µA @ 1200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 243ns
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 1200 V
• Forward Continuous Current: 50 A
• Max Surge Current: 102 A
• Configuration: Single
• Recovery Time: 380 ns
• Forward Voltage Drop: 1.7 V
• Maximum Reverse Leakage Current: 100 uA
• Maximum Power Dissipation: 138 W
• Operating Temperature Range: - 55 C to + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Packages: PG-TO263-3
• If (typ): 30.0 A
• If (max): 50.0 A
• If,sm (max): 102.0 A
• Vf (typ): 1.65 V
• Ir (max): 100.0 µA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IDB30E120XT

Rev.2.2
1 Power dissipation
P
parameter: T j ≤ 150°C
3 Typ. diode forward current
I
F
tot
= f (V
W
A
140
120
110
100
= f (T
90
80
70
60
50
40
30
20
10
90
70
60
50
40
30
20
10
0
0
25
0
F
)
C
)
0.5
50
-55°C
25°C
100°C
150°C
1
75
1.5
100
2
°C
V
T
V
C
F
150
3
Page 4
2 Diode forward current
I
parameter: T
4 Typ. diode forward voltage
V
F
F
= f(T
= f (T
A
V
2.4
1.8
1.6
1.4
1.2
55
45
40
35
30
25
20
15
10
5
0
2
-60
25
C
)
j
)
-20
j
50
≤ 150°C
20
30A
60A
15A
75
60
100
IDB30E120
2007-09-01
100
°C
°C
T
T
C
j
160
150