IDB30E120 Infineon Technologies, IDB30E120 Datasheet - Page 7
![DIODE 1200V 50A TO263-3](/photos/16/8/160871/to263_sml.jpg)
IDB30E120
Manufacturer Part Number
IDB30E120
Description
DIODE 1200V 50A TO263-3
Manufacturer
Infineon Technologies
Datasheet
1.IDB30E120.pdf
(8 pages)
Specifications of IDB30E120
Package / Case
SC-70-6, SC-88, SOT-363
Voltage - Forward (vf) (max) @ If
2.15V @ 30A
Voltage - Dc Reverse (vr) (max)
1200V (1.2kV)
Current - Average Rectified (io)
50A (DC)
Current - Reverse Leakage @ Vr
100µA @ 1200V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
243ns
Mounting Type
Surface Mount
Product
Switching Diodes
Peak Reverse Voltage
1200 V
Forward Continuous Current
50 A
Max Surge Current
102 A
Configuration
Single
Recovery Time
380 ns
Forward Voltage Drop
1.7 V
Maximum Reverse Leakage Current
100 uA
Maximum Power Dissipation
138 W
Operating Temperature Range
- 55 C to + 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Packages
PG-TO263-3
If (typ)
30.0 A
If (max)
50.0 A
If,sm (max)
102.0 A
Vf (typ)
1.65 V
Ir (max)
100.0 µA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
IDB30E120XT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IDB30E120
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IDB30E120
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
IDB30E120
Rev.2.2
2007-09-01
Page 7