IDH08S60C Infineon Technologies, IDH08S60C Datasheet - Page 3

• Manufacturer Part Number: IDH08S60C
• Description: DIODE SCHOTTKY 600V 8A TO220-2
• Manufacturer: Infineon Technologies
• Series: thinQ!™r

Specifications of IDH08S60C

• Diode Type: Silicon Carbide Schottky
• Voltage - Forward (vf) (max) @ If: 1.7V @ 8A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 8A (DC)
• Current - Reverse Leakage @ Vr: 100µA @ 600V
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Capacitance @ Vr, F: 310pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Repetitive Reverse Voltage Vrrm Max: 600V
• Forward Current If(av): 8A
• Forward Voltage Vf Max: 1.7V
• Forward Surge Current Ifsm Max: 59A
• Operating Temperature Range: -55°C To +175°C
• Technology: thinQ!™ 2G
• V: 600.0 V
• If (typ): 8.0 A
• Qc (typ): 19.0 nC
• Package: TO-220 real 2pin
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IDT08S60C; IDT08S60C; IDT08S60CX; IDT08S60CXK; SP000080226; SP000657994

Rev. 2.0
1 Power dissipation
P
parameter: R
3 Typ. forward characteristic
I
parameter: T
F
tot
=f(V
=f(T
80
70
60
50
40
30
20
10
20
15
10
F
0
5
0
); t
C
25
0
)
p
=400 µs
thJC(max)
j
50
1
75
100
T
V
C
F
-55 °C
2
[°C]
[V]
175 °C
125
100 °C
25 °C
150 °C
150
3
175
200
page 3
4
2 Diode forward current
I
parameter: R
4 Typ. forward characteristic in surge current
mode
I
F
F
=f(T
=f(V
20
16
12
80
60
40
20
C
F
8
4
0
0
); T
); t
25
0
p
j
=400 µs; parameter: T
≤175 °C
thJC(max)
50
2
75
; V
F(max)
100
175 °C
100 °C
T
150 °C
V
C
F
4
[°C]
[V]
125
25 °C
-55 °C
j
150
6
IDH08S60C
175
2009-06-02
200
8