IDH08S60C Infineon Technologies, IDH08S60C Datasheet - Page 4

• Manufacturer Part Number: IDH08S60C
• Description: DIODE SCHOTTKY 600V 8A TO220-2
• Manufacturer: Infineon Technologies
• Series: thinQ!™r

Specifications of IDH08S60C

• Diode Type: Silicon Carbide Schottky
• Voltage - Forward (vf) (max) @ If: 1.7V @ 8A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 8A (DC)
• Current - Reverse Leakage @ Vr: 100µA @ 600V
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Capacitance @ Vr, F: 310pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Repetitive Reverse Voltage Vrrm Max: 600V
• Forward Current If(av): 8A
• Forward Voltage Vf Max: 1.7V
• Forward Surge Current Ifsm Max: 59A
• Operating Temperature Range: -55°C To +175°C
• Technology: thinQ!™ 2G
• V: 600.0 V
• If (typ): 8.0 A
• Qc (typ): 19.0 nC
• Package: TO-220 real 2pin
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IDT08S60C; IDT08S60C; IDT08S60CX; IDT08S60CXK; SP000080226; SP000657994

Rev. 2.0
5 Typ. forward power dissipation vs.
average forward current
P
7 Transient thermal impedance
Z
parameter: D =t
thJC
F,AV
=f(t
10
10
10
=f(I
10
10
40
30
20
10
0
-1
-2
-3
1
0
10
p
0
F
)
), T
-5
0.02
0.05
0.1
0.2
0.5
single pulse
C
=100 °C, parameter: D =t
p
/T
0.1
10
-4
5
I
0.2
F(AV)
t [s]
10
-3
[A]
0.5
10
10
p
/T
-2
1
10
page 4
15
-1
6 Typ. reverse current vs. reverse voltage
I
parameter: T
8 Typ. capacitance vs. reverse voltage
C =f(V
R
=f(V
400
350
300
250
200
150
100
10
10
10
10
10
50
R
R
0
-1
-2
-3
1
0
); T
10
)
100
-1
C
=25 °C, f =1 MHz
100 °C
j
150 °C
200
175 °C
10
0
25 °C
300
V
V
10
R
R
[V]
[V]
1
400
-55 °C
10
IDH08S60C
2
500
2009-06-02
10
600
3