SDT10S60 Infineon Technologies, SDT10S60 Datasheet - Page 4

• Manufacturer Part Number: SDT10S60
• Description: DIODE SCHOTTKY 10A 600V TO220-2
• Manufacturer: Infineon Technologies
• Series: thinQ!™r

Specifications of SDT10S60

• Package / Case: TO-220-2
• Voltage - Forward (vf) (max) @ If: 1.7V @ 10A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 10A (DC)
• Current - Reverse Leakage @ Vr: 350µA @ 600V
• Diode Type: Silicon Carbide Schottky
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Capacitance @ Vr, F: 350pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Product: Schottky Diodes
• Peak Reverse Voltage: 600 V
• Forward Continuous Current: 10 A
• Max Surge Current: 31 A
• Configuration: Single
• Forward Voltage Drop: 1.7 V
• Maximum Reverse Leakage Current: 350 uA
• Operating Temperature Range: - 55 C to + 175 C
• Mounting Style: Through Hole
• Technology: thinQ!™
• V: 600.0 V
• If (typ): 10.0 A
• Qc (typ): 29.0 nC
• Package: TO-220 (decapped middle leg)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SDT10S60X; SDT10S60XK; SP000014896

1 Power dissipation
P
3 Typ. forward characteristic
I
parameter: T j , t
Rev. 2.2
F
tot
= f ( V
= f ( T
W
A
80
60
50
40
30
20
10
20
16
14
12
10
0
8
6
4
2
0
0
0
SDT10S60
F
)
150°C
125°C
100°C
25°C
-40°C
0.25 0.5 0.75
C
20
)
40
p
60
= 350 µs
1
80 100 120 140 160
1.25 1.5 1.75
2
T
V
V
°C
C
F
190
2.5
Page 4
2 Diode forward current
I
parameter: T
4 Typ. forward power dissipation vs.
average forward current
P
F
F(AV) = f ( I
= f ( T
W
A
11
48
40
36
32
28
24
20
16
12
9
8
7
6
5
4
3
2
1
0
8
4
0
0
0
C
)
F
d=1
d=0,5
d=0,2
d=0,1
20
)
2
j
T
≤ 175 °C
4
40
C
=100°C, d = t
6
60
8
80
10
100 120 140
12
p
/ T
14
SDT10S60
SDT10S60
2008-06-02
16
°C
T
I
A
F(AV)
C
180
20