SDT10S60 Infineon Technologies, SDT10S60 Datasheet - Page 6

• Manufacturer Part Number: SDT10S60
• Description: DIODE SCHOTTKY 10A 600V TO220-2
• Manufacturer: Infineon Technologies
• Series: thinQ!™r

Specifications of SDT10S60

• Package / Case: TO-220-2
• Voltage - Forward (vf) (max) @ If: 1.7V @ 10A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 10A (DC)
• Current - Reverse Leakage @ Vr: 350µA @ 600V
• Diode Type: Silicon Carbide Schottky
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Capacitance @ Vr, F: 350pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Product: Schottky Diodes
• Peak Reverse Voltage: 600 V
• Forward Continuous Current: 10 A
• Max Surge Current: 31 A
• Configuration: Single
• Forward Voltage Drop: 1.7 V
• Maximum Reverse Leakage Current: 350 uA
• Operating Temperature Range: - 55 C to + 175 C
• Mounting Style: Through Hole
• Technology: thinQ!™
• V: 600.0 V
• If (typ): 10.0 A
• Qc (typ): 29.0 nC
• Package: TO-220 (decapped middle leg)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SDT10S60X; SDT10S60XK; SP000014896

9 Typ. capacitive charge vs. current slope
parameter: T
Rev. 2.2
Q
c
= f ( di
nC
40
30
25
20
15
10
5
0
0
F
I
/dt )
F
100 200 300 400 500 600 700 800
*2
I
F
*0.5
j
= 150 °C
I
F
A/µs
di
F
/dt
1000
Page 6
SDT10S60
SDT10S60
2008-06-02