MBR1100
Axial Lead Rectifier
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlap
contact. Ideally suited for use as rectifiers in low−voltage,
high−frequency inverters, free wheeling diodes, and polarity
protection diodes.
Features
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Mechanical Characteristics:
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Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The heat generated must be less than the thermal conductivity from
*For additional information on our Pb−Free strategy and soldering details, please
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2006
June, 2006 − Rev. 6
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(V
P.C. Board Mounting, [see Note 3], T
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
Operating and Storage Junction Temperature
Range (Note 1)
Voltage Rate of Change (Rated V
These rectifiers employ the Schottky Barrier principle in a large area
Leads are Readily Solderable
260°C Max. for 10 Seconds
Low Reverse Current
Low Stored Charge, Majority Carrier Conduction
Low Power Loss/High Efficiency
Highly Stable Oxide Passivated Junction
Guard−Ring for Stress Protection
Low Forward Voltage
175°C Operating Junction Temperature
High Surge Capacity
These are Pb−Free Devices*
Case: Epoxy, Molded
Weight: 0.4 Gram (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Lead Temperature for Soldering Purposes:
Polarity: Cathode Indicated by Polarity Band
Junction−to−Ambient: dP
R(equiv)
≤ 0.2 V
R
(dc), R
Rating
qJA
D
/dT
= 50°C/W,
Preferred Device
J
< 1/R
R
)
A
= 120°C)
qJA
.
Symbol
T
V
V
dv/dt
I
J
FSM
RWM
V
RRM
, T
I
O
R
stg
Value
−65 to
+175
100
1.0
50
10
1
V/ns
Unit
°C
V
A
A
†For information on tape and reel specifications,
Preferred devices are recommended choices for future use
and best overall value.
MBR1100
MBR1100G
MBR1100RL
MBR1100RLG
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Device
(Note: Microdot may be in either location)
1.0 AMPERE, 100 VOLTS
BARRIER RECTIFIER
ORDERING INFORMATION
A
Y
WW = Work Week
G
MARKING DIAGRAM
http://onsemi.com
SCHOTTKY
= Assembly Location
= Year
= Pb−Free Package
Axial Lead*
Axial Lead*
Axial Lead*
Axial Lead*
Package
MBR1100
YYWW G
Publication Order Number:
A
G
AXIAL LEAD
CASE 59
STYLE 1
DO−41
5000/Tape & Reel
5000/Tape & Reel
1000 Units/Bag
1000 Units/Bag
Shipping
MBR1100/D
†