MBR1100 ON Semiconductor, MBR1100 Datasheet - Page 2

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MBR1100

Manufacturer Part Number
MBR1100
Description
DIODE SCHOTTKY 1A 100V DO-41
Manufacturer
ON Semiconductor
Datasheet

Specifications of MBR1100

Voltage - Forward (vf) (max) @ If
790mV @ 1A
Voltage - Dc Reverse (vr) (max)
100V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
500µA @ 100V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
DO-204AL, DO-41, Axial
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Other names
MBR1100OS

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2.
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Thermal Resistance, Junction−to−Ambient
Maximum Instantaneous Forward Voltage (Note 2)
Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2)
(i
(i
(T
(T
Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
0.05
0.02
F
F
5.0
2.0
1.0
0.5
0.2
0.1
4.0
3.0
2.0
1.0
20
10
L
L
= 1 A, T
= 1 A, T
0
= 25°C)
= 100°C)
0
0
0.1 0.2
20
L
L
= 25°C)
= 100°C)
Figure 1. Typical Forward Voltage
(Mounting Method 3 per Note 3)
40
0.3
v
T
100°C
25°C
F
, INSTANTANEOUS VOLTAGE (VOLTS)
SQUARE WAVE
J
Figure 3. Current Derating
T
= 150°C
A
0.4 0.5
, AMBIENT TEMPERATURE (°C)
60
80
0.6
100
0.7 0.8
dc
Characteristic
Characteristic
(See Note 4)
(T
120
L
0.9
= 25°C unless otherwise noted)
140
1.0
1.1
160
1.2 1.3
http://onsemi.com
180
MBR1100
1.4
200
2
0.04
0.02
0.01
400
200
100
1 K
4.0
2.0
1.0
0.4
0.2
0.1
4.0
3.0
2.0
1.0
40
20
10
0
0
0
{
device in the voltage grouping. Typical reverse current for
lower voltage selections can be estimated from these
same curves if V
The curves shown are typical for the highest voltage
10
T
125°C
100°C
J
Figure 2. Typical Reverse Current {
I
= 150°C
F(AV)
1.0
20
Figure 4. Power Dissipation
, AVERAGE FORWARD CURRENT (AMPS)
V
Symbol
Symbol
R
30
, REVERSE VOLTAGE (VOLTS)
R
R
V
i
qJA
R
F
is sufficiently below rated V
40
2.0
50
SQUARE WAVE
See Note 3
60
3.0
Max
Max
0.79
0.69
0.5
5.0
70
4.0
80
R
dc
.
90
°C/W
Unit
Unit
mA
V
100
5.0

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