MBR1100 ON Semiconductor, MBR1100 Datasheet - Page 3

• Manufacturer Part Number: MBR1100
• Description: DIODE SCHOTTKY 1A 100V DO-41
• Manufacturer: ON Semiconductor

Specifications of MBR1100

• Voltage - Forward (vf) (max) @ If: 790mV @ 1A
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 500µA @ 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Other names: MBR1100OS

É É É É É É É É
É É É É É É É É
É É É É É É É É
É É É É É É É É
NOTE 3 — MOUNTING DATA:
(R
guideline values for preliminary engineering or in case the
tie point temperature cannot be measured.
Data shown for thermal resistance junction−to−ambient
150
100
qJA)
Mounting Method 1
90
80
70
60
50
40
30
20
15
Mounting
P.C. Board with
1−1/2″ x 1−1/2″
copper surface.
Method
Mounting Method 2
0
L
for the mounting shown is to be used as a typical
L
1
2
3
10
Typical Values for R
Figure 5. Typical Capacitance
20
V
L
R
, REVERSE VOLTAGE (VOLTS)
L
1/8
52
67
—
30
Lead Length, L (in)
40
T
f
TEST
1/4
J
65
80
= 25°C
50
= 1 MHz
É
É É
É
qJA
BOARD GROUND
1/2
72
87
50
60
Mounting Method 3
1−1/2″ x 1−1/2″
copper surface.
in Still Air
P.C. Board with
L = 3/8″
PLANE
70
100
3/4
85
80
°C/W
°C/W
°C/W
R
90
http://onsemi.com
qJA
100
MBR1100
3
resistance for any mounting configuration to be found. For
a given total lead length, lowest values occur when one side
of the rectifier is brought as close as possible to the heat sink.
Terms in the model signify:
T
T
R
R
R
P
respectively.) Values for thermal resistance components are:
R
R
NOTE 5 — HIGH FREQUENCY OPERATION:
majority carrier conduction, it is not subject to junction
diode forward and reverse recovery transients due to
minority carrier injection and stored charge. Satisfactory
circuit analysis work may be performed by using a model
consisting of an ideal diode in parallel with a variable
capacitance. (See Figure 5)
operation will be satisfactory up to several megahertz. For
example, relative waveform rectification efficiency is
approximately 70 percent at 2 MHz, e.g., the ratio of dc
power to RMS power in the load is 0.28 at this frequency,
whereas perfect rectification would yield 0.406 for sine
wave inputs. However, in contrast to ordinary junction
diodes, the loss in waveform efficiency is not indicative of
power loss: it is simply a result of reverse current flow
through the diode capacitance, which lowers the dc output
voltage.
A
D
L
qS
qL
qJ
qL
qJ
Use of the above model permits junction to lead thermal
(Subscripts A and K refer to anode and cathode sides,
Since current flow in a Schottky rectifier is the result of
Rectification efficiency measurements show that
= Ambient Temperature T
= Lead Temperature
= Power Dissipation
= Thermal Resistance, Junction to Case
= 36°C/W typically and 46°C/W maximum.
= Thermal Resistance, Heat Sink to Ambient
= Thermal Resistance, Lead to Heat Sink
= 100°C/W/in typically and 120°C/W/in maximum.
T
R
A(A)
qS(A)
NOTE 4 — THERMAL CIRCUIT MODEL:
(For heat conduction through the leads)
T
L(A)
R
qL(A)
T
C(A)
R
qJ(A)
T
J
T
C
J
P
R
)
= Junction Temperature
D
= Case Temperature
q J(K
T
C(K)
R
qL(K)
T
L(K)
R
T
qS(K)
A(K)