FGA25N120ANTDTU Fairchild Semiconductor, FGA25N120ANTDTU Datasheet - Page 2

• Manufacturer Part Number: FGA25N120ANTDTU
• Description: IGBT NPT TRENCH 1200V 50A TO3P
• Manufacturer: Fairchild Semiconductor

Specifications of FGA25N120ANTDTU

• Igbt Type: NPT and Trench
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 25A
• Current - Collector (ic) (max): 50A
• Power - Max: 312W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-3P-3 (Straight Leads)
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 50 A
• Gate-emitter Leakage Current: +/- 250 nA
• Power Dissipation: 312 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 50 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 50A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-3PN
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FGA25N120ANTDTU_NL; FGA25N120ANTDTU_NL

FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2
Package Marking and Ordering Information
Electrical Characteristics of the IGBT
Notes:
(1) Repetitive rating: Pulse width limited by max. junction temperature
Off Characteristics
I
I
On Characteristics
V
V
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
E
E
E
t
t
t
t
E
E
E
Q
Q
Q
Device Marking
Symbol
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
FGA25N120ANTD
GE(th)
CE(sat)
on
off
ts
on
off
ts
ies
oes
res
g
ge
gc
Collector Cut-Off Current
G-E Leakage Current
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
FGA25N120ANTD
Parameter
Device
Package
TO-3P
V
V
I
V
f = 1MHz
V
R
Inductive Load, T
V
R
Inductive Load, T
V
V
I
I
I
T
C
C
C
C
CE
GE
CE
CC
CC
CE
GE
G
G
C
= 50A
= 25A
= 25A
= 25mA, V
= 10Ω, V
= 10Ω, V
= 125°C
= 30V
= V
= V
= 600 V, I
= 600 V, I
= 600 V, I
= 15V
T
C
Test Conditions
= 25°C unless otherwise noted
CES
GES
,
2
,
,
,
V
V
, V
, V
V
V
GE
GE
GE
GE
CE
GE
GE
C
C
C
GE
CE
Reel Size
= 15V,
= 15V,
= 0V,
= 25A,
= 25A,
= 25A,
= 15V
= V
= 15V
= 15V,
C
C
= 0V
= 0V
= 25°C
= 125°C
GE
--
Tape Width
Min.
3.5
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ.
3700
2.15
2.65
0.96
5.06
130
190
100
200
154
200
100
5.5
2.0
4.1
4.3
1.5
5.8
80
50
60
50
60
15
--
--
Max.
± 250
180
300
150
7.5
2.5
6.2
1.5
7.7
6.9
2.4
9.3
90
23
--
--
--
--
--
--
--
--
--
--
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Quantity
3
www.fairchildsemi.com
30
Units
mA
nA
mJ
mJ
mJ
mJ
mJ
mJ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
V
V
V
V