FGA25N120ANTDTU Fairchild Semiconductor, FGA25N120ANTDTU Datasheet - Page 6
FGA25N120ANTDTU
Manufacturer Part Number
FGA25N120ANTDTU
Description
IGBT NPT TRENCH 1200V 50A TO3P
Manufacturer
Fairchild Semiconductor
Datasheet
1.FGA25N120ANTDTU.pdf
(9 pages)
Specifications of FGA25N120ANTDTU
Igbt Type
NPT and Trench
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 25A
Current - Collector (ic) (max)
50A
Power - Max
312W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-3P-3 (Straight Leads)
Configuration
Single
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2 V
Maximum Gate Emitter Voltage
+/- 20 V
Continuous Collector Current At 25 C
50 A
Gate-emitter Leakage Current
+/- 250 nA
Power Dissipation
312 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
50 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Channel Type
N
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
50A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-3PN
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FGA25N120ANTDTU_NL
FGA25N120ANTDTU_NL
FGA25N120ANTDTU_NL
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FGA25N120ANTDTU
Manufacturer:
Fairchild Semiconductor
Quantity:
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Part Number:
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Quantity:
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Quantity:
20 000
Part Number:
FGA25N120ANTDTU-F109
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FGA25N120ANTDTU_F109
Manufacturer:
FSC
Quantity:
4 500
FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2
Typical Performance Characteristics
Figure 13. Switching Loss vs. Collector Current
Figure 15. SOA Characteristics
0.01
100
0.1
0.1
10
10
1
1
0.1
10
Common Emitter
V
T
T
Ic MAX (Pulsed)
Ic MAX (Continuous)
Single Nonrepetitive
Pulse T
Curves must be derated
linearly with increase
in temperature
GE
C
C
= 25
= 125
=
±
1 1 0
1
15V, R
°
C
C
°
C
= 25
Collector - Emitter Voltage, V
1
20
°
G
C
= 10
Collector Current, I
1 E - 3
0 . 0 1
0 .
Ω
1 E - 5
10
DC Operation
30
0.2
0.1
0.05
0.02
0.01
0.5
Figure 17. Transient Thermal Impedance of IGBT
single pulse
C
100
[A]
1 E - 4
1ms
CE
40
[V]
100
µ
s
Eoff
1000
Eon
50
µ
s
R e c t a n g u l a r P u l s e D u r a t i o n [ s e c ]
50
1 E - 3
(Continued)
6
0 . 0 1
Figure 14. Gate Charge Characteristics
Figure 16. Turn-Off SOA
100
16
14
12
10
10
8
6
4
2
0
1
0 . 1
0
1
Common Emitter
R
T
C
L
= 24
= 25
20
Ω
°
Pdm
C
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + T
40
Collector-Emitter Voltage, V
60
t1
1
10
Gate Charge, Q
t2
Safe Operating Area
V
GE
80
= 15V, T
Vcc = 200V
100
C
C
120
= 125
1 0
100
g
[nC]
°
140
C
CE
[V]
160
400V
www.fairchildsemi.com
600V
180
1000
200