FGA25N120ANTDTU Fairchild Semiconductor, FGA25N120ANTDTU Datasheet - Page 5

• Manufacturer Part Number: FGA25N120ANTDTU
• Description: IGBT NPT TRENCH 1200V 50A TO3P
• Manufacturer: Fairchild Semiconductor

Specifications of FGA25N120ANTDTU

• Igbt Type: NPT and Trench
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 25A
• Current - Collector (ic) (max): 50A
• Power - Max: 312W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-3P-3 (Straight Leads)
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 50 A
• Gate-emitter Leakage Current: +/- 250 nA
• Power Dissipation: 312 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 50 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 50A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-3PN
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FGA25N120ANTDTU_NL; FGA25N120ANTDTU_NL

FGA25N120ANTD / FGA25N120ANTD_F109 Rev. B2
Typical Performance Characteristics
Figure 7. Capacitance Characteristics
Figure 9. Turn-Off Characteristics vs.
Figure 11. Turn-On Characteristics vs.
5000
4500
4000
3500
3000
2500
2000
1500
1000
100
1000
500
100
10
0
10
1
0
Gate Resistance
Ciss
Common Emitter
V
T
T
Coss
Crss
C
C
Common Emitter
V
I
T
T
GE
C
Collector Current
C
C
CC
= 25
= 125
= 25A
=
= 25
= 125
= 600V, V
±
10
15V, R
°
C
°
°
C
C
°
Collector-Emitter Voltage, V
C
20
G
GE
20
= 10
Collector Current, I
Gate Resistance, R
=
±
Ω
15V
30
30
40
C
G
[A]
10
Common Emitter
V
T
[
Ω
GE
C
CE
50
= 25
]
40
= 0V, f = 1MHz
[V]
°
C
td(on)
60
tr
td(off)
tf
50
70
(Continued)
5
Figure 8. Turn-On Characteristics vs. Gate
Figure 10. Switching Loss vs. Gate Resistance
Figure 12. Turn-Off Characteristics vs.
100
100
10
10
1
0
10
0
Resistance
Common Emitter
V
I
T
T
C
Common Emitter
V
T
T
td(on)
C
C
CC
Collector Current
GE
C
C
= 25A
tr
= 25
= 125
= 25
= 125
= 600V, V
=
10
10
±
°
15V, R
°
C
°
C
°
C
C
20
GE
20
G
Gate Resistance, R
20
Gate Resistance, R
= 10
Collector Current, I
=
±
15V
Ω
30
30
30
40
40
Common Emitter
V
I
T
T
C
CC
C
C
= 25A
G
C
= 25
= 125
G
= 600V, V
[
[A]
Ω
[
Ω
50
50
]
°
]
C
°
40
C
GE
60
www.fairchildsemi.com
60
=
td(off)
tf
±
Eoff
Eon
15V
70
70
50