FGH30N60LSDTU Fairchild Semiconductor, FGH30N60LSDTU Datasheet - Page 2

• Manufacturer Part Number: FGH30N60LSDTU
• Description: IGBT SWITCHING 600V 60A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of FGH30N60LSDTU

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.4V @ 15V, 30A
• Current - Collector (ic) (max): 60A
• Power - Max: 480W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 60A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 60 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant

FGH30N60LSD Rev. A2
Package Marking and Ordering Information
Electrical Characteristics of the IGBT
Off Characteristics
BV
∆B
∆T
I
I
On Characteristics
V
V
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
E
E
t
t
t
t
E
E
Q
Q
Q
L
Device Marking
Symbol
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
e
GE(th)
CE(sat)
on
off
on
off
ies
oes
res
g
ge
gc
FGH30N60LSD
J
CES
VCES
/
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
FGH30N60LSDTU
Parameter
Device
Package
TO-247
V
V
V
V
V
f = 1MHz
V
R
Inductive Load, T
V
R
Inductive Load, T
V
V
Measured 5mm from PKG
I
I
I
T
I
C
C
C
C
GE
GE
CE
GE
CE
CC
CC
CE
GE
G
G
C
= 30A
= 30A
= 60 A
= 250uA, V
= 6.8Ω, V
=6.8Ω, V
= 125°C
= 30V
= V
= 300 V, I
= 0V, I
= 0V, I
= V
= 400 V, I
= 400 V, I
= 15V
Test Conditions
T
C
CES
GES
,
,
= 25°C unless otherwise noted
,
V
V
,
V
2
C
C
V
GE
GE
, V
, V
GE
GE
GE
= 250uA
= 250uA
GE
C
C
C
CE
GE
CE
= 15V
= 15V,
= 15V
= 15V,
= 0V,
= 30A,
= 15V,
= 30A,
= 30A,
Packaging
C
C
= V
= 0V
= 0V
= 25°C
= 125°C
Type
GE
Tube
Qty per Tube
Min.
600
4.0
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30ea
Typ.
3550
245
250
270
225
105
0.6
5.5
1.1
1.0
1.3
1.3
1.1
2.6
1.1
90
18
46
21
17
45
36
30
--
--
--
7
Max.
±250
250
7.0
1.4
2.0
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Max Qty
per Box
www.fairchildsemi.com
-
Units
V/°C
uA
nA
mJ
mJ
mJ
mJ
nC
nC
nC
nH
pF
pF
pF
ns
ns
ns
us
ns
ns
ns
us
V
V
V
V
V