FGH30N60LSDTU Fairchild Semiconductor, FGH30N60LSDTU Datasheet - Page 3

• Manufacturer Part Number: FGH30N60LSDTU
• Description: IGBT SWITCHING 600V 60A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of FGH30N60LSDTU

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.4V @ 15V, 30A
• Current - Collector (ic) (max): 60A
• Power - Max: 480W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 60A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 60 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant

FGH30N60LSD Rev. A2
Electrical Characteristics of the Diode
V
I
t
t
t
Q
RM
rr
a
b
FM
rr
Parameter
I
I
V
I
I
I
F
F
F
F
F
R
= 15A
= 15A
=1A, di/dt = 100A/µs, V
=15A, di/dt = 100A/µs, V
=15A, di/dt = 100A/µs, V
= 600V
Conditions
CC
CC
CC
= 30V
= 390V
= 390V
T
C
= 25°C unless otherwise noted
3
T
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
= 25 °C
= 125 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
Min.
-
-
-
-
-
-
-
-
Typ.
27.5
1.8
1.6
18
13
-
-
-
Max
100
2.2
35
40
-
-
-
-
www.fairchildsemi.com
Units
µA
nC
ns
ns
ns
ns
V
V