STGW30N120KD STMicroelectronics, STGW30N120KD Datasheet - Page 5

• Manufacturer Part Number: STGW30N120KD
• Description: IGBT 30A 1200V TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGW30N120KD

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.85V @ 15V, 20A
• Current - Collector (ic) (max): 60A
• Power - Max: 220W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: 497-7015-5

STGW30N120KD
Table 6.
Table 7.
1.
2. Turn-off losses include also the tail of the collector current
Table 8.
Symbol
(di/dt)
(di/dt)
Symbol
Symbol
Eon
Eon
t
t
E
E
t
t
t
t
r
r
in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs and diode are at
the same temperature (25°C and 125°C)
d
d
d(on)
d(on)
(V
(V
Eon is the turn-on losses when a typical diode is used in the test circuit in
off
off
E
E
I
I
(
(
Q
Q
V
t
t
t
t
rrm
rrm
t
t
off
off
r
r
f
f
ts
ts
off
off
rr
rr
F
rr
rr
(2)
(2)
(1)
(1)
on
on
)
)
)
)
Turn-on delay time
Current rise time
Turn-on current slope
Turn-on delay time
Current rise time
Turn-on current slope
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
Forward on-voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching on/off (inductive load)
Switching energy (inductive load)
Collector-emitter diode
Parameter
Parameter
Parameter
V
R
(see Figure 17)
V
R
Tc= 125 °C
V
R
(see Figure 17)
V
R
Tc= 125 °C
V
R
(see Figure 17)
V
R
Tc= 125 °C
I
I
I
di/dt = 100 A/µs
(see Figure 20)
I
Tc = 125 °C,
di/dt = 100 A/µs
(see Figure 20)
F
F
F
F
CC
CC
G
G
CC
CC
CC
CC
G
G
G
G
= 10 Ω, V
= 10 Ω, V
= 20 A
= 20 A, T
= 20 A, V
= 20 A, V
= 10 Ω, V
= 10 Ω, V
= 10 Ω, V
= 10 Ω, V
= 960 V, I
= 960 V, I
= 960 V, I
= 960 V, I
= 960 V, I
= 960 V, I
Test conditions
Test conditions
Test conditions
(see Figure 17)
(see Figure 17)
(see Figure 17)
GE
GE
C
R
R
GE
GE
GE
GE
C
C
= 125 °C
= 45 V,
= 45 V,
C
C
C
C
= 15 V,
= 15 V,
= 15 V,
= 15 V,
= 15 V,
= 15 V,
= 20 A
= 20 A
= 20 A
= 20 A
= 20 A
= 20 A
Figure
Electrical characteristics
Min.
Min.
Min.
17. If the IGBT is offered
Typ.
Typ. Max.
Typ.
840
760
251
260
140
324
432
235
152
722
1.9
1.7
5.6
2.4
4.3
6.7
3.9
5.8
9.7
36
22
35
22
70
84
9
Max.
Max.
A/µs
A/µs
Unit
Unit
Unit
nC
nC
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
mJ
mJ
V
V
A
A
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