STGW30N120KD STMicroelectronics, STGW30N120KD Datasheet - Page 7

• Manufacturer Part Number: STGW30N120KD
• Description: IGBT 30A 1200V TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGW30N120KD

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.85V @ 15V, 20A
• Current - Collector (ic) (max): 60A
• Power - Max: 220W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: 497-7015-5

STGW30N120KD
Figure 8.
Figure 10. Normalized breakdown voltage vs.
Figure 12. Switching losses vs. gate
Normalized gate threshold voltage
vs. temperature
temperature
resistance
Figure 9.
Figure 11. Switching losses vs. temperature
Figure 13. Switching losses vs. collector
E (µJ)
3000
1000
4000
2000
0
0
V
V
R
T
Collector-emitter on voltage vs.
collector current
current
CC
GE
J
G
= 125˚C
= 10Ω
= 780V
= 15V
5
10
Electrical characteristics
15
20
HV41260
Eoff
Eon
I
C
(A)
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