STGW30N120KD STMicroelectronics, STGW30N120KD Datasheet - Page 6

• Manufacturer Part Number: STGW30N120KD
• Description: IGBT 30A 1200V TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGW30N120KD

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.85V @ 15V, 20A
• Current - Collector (ic) (max): 60A
• Power - Max: 220W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: 497-7015-5

Electrical characteristics
2.1
6/13
Figure 2.
Figure 4.
Figure 6.
I
C
120
(A)
V
30
90
60
(V)
16
12
GE
0
8
0
4
0
0
-5
V
Electrical characteristics (curves)
CE
Output characteristics
Transconductance
Gate charge vs. gate-source
voltage
I
C
5
20
=20A
=960V
10
40
15
60
20
V
GE
25
80
=15V
14V
13V
12V
HV41160
30 V
100 Qg(nC)
11V
10V
HV41190
CE
(V)
Figure 3.
Figure 5.
Figure 7.
I
C
120
(A)
90
60
30
0
0
Transfer characteristics
Collector-emitter on voltage vs.
temperature
Capacitance variations
3
V
CE
= 25V
6
9
STGW30N120KD
12
HV41165
V
GE
(V)