HGTP7N60A4 Fairchild Semiconductor, HGTP7N60A4 Datasheet

IGBT N-CH SMPS 600V 34A TO220AB

HGTP7N60A4

Manufacturer Part Number
HGTP7N60A4
Description
IGBT N-CH SMPS 600V 34A TO220AB
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of HGTP7N60A4

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 7A
Current - Collector (ic) (max)
34A
Power - Max
125W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Type
IGBT
Dc Collector Current
34A
Collector Emitter Voltage Vces
2.7V
Power Dissipation Pd
125W
Collector Emitter Voltage V(br)ceo
600V
Transistor Case Style
TO-220AB
No. Of Pins
3
Svhc
No SVHC
Rohs Compliant
Yes
Operating Temperature Range
-55°C To +150°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Other names
HGTP7N60A4_NL
HGTP7N60A4_NL

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©2004 Fairchild Semiconductor Corporation
600V, SMPS Series N-Channel IGBT
The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4
are MOS gated high voltage switching devices combining
the best features of MOSFETs and bipolar transistors. These
devices have the high input impedance of a MOSFET and
the low on-state conduction loss of a bipolar transistor. The
much lower on-state voltage drop varies only moderately
between 25
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49331.
Ordering Information
NOTE: When ordering, use the entire part number.
Packaging
HGT1S7N60A4S9A
HGTG7N60A4
HGTP7N60A4
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
PART NUMBER
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
o
(BOTTOM SIDE METAL)
C and 150
COLLECTOR
JEDEC STYLE TO-247
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
TO-263AB
TO-247
TO-220AB
o
C.
PACKAGE
Data Sheet
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
E
C
G7N60A4
G7N60A4
G7N60A4
G
BRAND
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
HGT1S7N60A4S9A, HGTG7N60A4
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
Features
• >100kHz Operation at 390V, 7A
• 200kHz Operation at 390V, 5A
• 600V Switching SOA Capability
• Typical Fall Time
• Low Conduction Loss
Symbol
September 2004
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
G
E
HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B2
. . . . . . . . . . . . . . . . . . . 75
JEDEC TO-220AB
JEDEC TO-263AB
G
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
HGTP7N60A4
E
C
G
E
C
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
ns at T
4,587,713
4,644,637
4,801,986
4,883,767
J
= 125
o
C

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HGTP7N60A4 Summary of contents

Page 1

... Data Sheet 600V, SMPS Series N-Channel IGBT The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The ...

Page 2

... CES 34 C25 14 C110 GES 30 GEM 35A at 600V 25mJ 125 D 1 -55 to 150 J STG 300 L 260 PKG MIN TYP 600 - 125 1 125 C - 1.6 J 4.5 5 15V 9 15V - 20V - 100 - 120 - 60 HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B2 UNITS MAX UNITS - 250 2.7 V 2.2 V 7.0 V 250 150 ...

Page 3

... IGBT. The diode type is specified 150 15V 100 100 200 300 400 V , COLLECTOR TO EMITTER VOLTAGE ( 390V 125 GATE TO EMITTER VOLTAGE (V) GE FIGURE 4. SHORT CIRCUIT WITHSTAND TIME HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B2 MAX UNITS - 150 215 J 170 J o 1.0 C/W ON2 500 600 700 140 C 120 100 ...

Page 4

... 1mH 390V G CE 300 250 200 125 12V OR 15V J GE 150 100 COLLECTOR TO EMITTER CURRENT (A) CE EMITTER CURRENT 1mH 390V 12V 125 COLLECTOR TO EMITTER CURRENT (A) CE EMITTER CURRENT HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev 2.0 2.5 3.0 = 12V OR 15V 15V = 12V 15V ...

Page 5

... 125 12V OR 15V COLLECTOR TO EMITTER CURRENT (A) CE CURRENT 1mA G(REF 600V 400V 200V GATE CHARGE (nC) G FIGURE 14. GATE CHARGE WAVEFORMS 125 1mH 390V TOTAL ON2 OFF I = 14A 3.5A CE 0.1 10 100 R , GATE RESISTANCE ( ) G HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev 12V OR 15V 15V 1000 ...

Page 6

... FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE - RECTANGULAR PULSE DURATION ( 390V DD - 2.8 DUTY CYCLE < 0.5%, T PULSE DURATION = 250 s, 2.6 2 14A 3. GATE TO EMITTER VOLTAGE ( GATE TO EMITTER VOLTAGE DUTY FACTOR PEAK 90% 10% E ON2 E OFF 90% 10% t d(OFF FIGURE 21. SWITCHING TEST WAVEFORMS HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev d(ON)I ...

Page 7

... A 50% duty factor was used (Figure 3) and D ) are approximated )/2. CE are defined in the switching waveforms OFF is the integral of the ON2 during turn-on and during turn-off. All tail losses are included in the ; i.e., the collector current equals zero OFF HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev The ON2 - T )/ ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ ...

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