HGTP7N60A4 Fairchild Semiconductor, HGTP7N60A4 Datasheet - Page 3

• Manufacturer Part Number: HGTP7N60A4
• Description: IGBT N-CH SMPS 600V 34A TO220AB
• Manufacturer: Fairchild Semiconductor

Specifications of HGTP7N60A4

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 7A
• Current - Collector (ic) (max): 34A
• Power - Max: 125W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 34A
• Collector Emitter Voltage Vces: 2.7V
• Power Dissipation Pd: 125W
• Collector Emitter Voltage V(br)ceo: 600V
• Transistor Case Style: TO-220AB
• No. Of Pins: 3
• Svhc: No SVHC
• Rohs Compliant: Yes
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: HGTP7N60A4_NL; HGTP7N60A4_NL

Electrical Specifications
NOTES:
Typical Performance Curves
©2004 Fairchild Semiconductor Corporation
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 2)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
Thermal Resistance Junction To Case
2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
3. Turn-Off Energy Loss (E
FIGURE 1. DC COLLECTOR CURRENT vs CASE
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
500
200
100 f
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
Figure 20.
at the point where the collector current equals zero (I
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
35
30
25
20
15
10
30
5
0
25
1
P
f
R
MAX1
MAX2
T
C
ØJC
J
= CONDUCTION DISSIPATION
= 125
(DUTY FACTOR = 50%)
= 1.0
PARAMETER
= 0.05 / (t
= (P
TEMPERATURE
EMITTER CURRENT
I
CE
o
50
C, R
, COLLECTOR TO EMITTER CURRENT (A)
D
o
C/W, SEE NOTES
- P
T
G
C
C
d(OFF)I
= 25 , L = 2mH, V
) / (E
, CASE TEMPERATURE (
OFF
ON2
75
+ t
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
d(ON)I
+ E
T
OFF
J
)
5
= 25
)
100
CE
o
= 390V
C, Unless Otherwise Specified (Continued)
Unless Otherwise Specified
o
SYMBOL
C)
t
t
d(OFF)I
E
E
E
d(ON)I
R
10
ON1
ON2
OFF
125
t
t
rI
fI
JC
75
V
T
GE
C
o
CE
C
= 15V
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
V
15V
GE
IGBT and Diode at T
I
V
V
R
L = 1mH
Test Circuit (Figure 20)
CE
150
GE
CE
G
20
= 25
= 7A
= 390V
= 15V
TEST CONDITIONS
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
40
30
20
10
16
14
12
10
0
8
6
4
J
0
10
= 125
T
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
J
= 150
o
100
C
V
o
V
11
CE
V
C, R
GE
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
, GATE TO EMITTER VOLTAGE (V)
ON1
J
G
= 390V, R
200
HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B2
as the IGBT. The diode type is specified in
= 25 , V
is the turn-on loss of the IGBT only. E
12
MIN
G
-
-
-
-
-
-
-
-
GE
300
= 25 , T
= 15V, L = 100 H
13
TYP
130
200
125
400
10
75
50
J
7
-
= 125
t
I
SC
SC
o
500
14
C
MAX
150
215
170
1.0
85
-
-
-
600
15
UNITS
o
140
120
100
80
60
40
20
C/W
ns
ns
ns
ns
J
J
J
ON2
700