HGTP7N60A4 Fairchild Semiconductor, HGTP7N60A4 Datasheet - Page 6

• Manufacturer Part Number: HGTP7N60A4
• Description: IGBT N-CH SMPS 600V 34A TO220AB
• Manufacturer: Fairchild Semiconductor

Specifications of HGTP7N60A4

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 7A
• Current - Collector (ic) (max): 34A
• Power - Max: 125W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 34A
• Collector Emitter Voltage Vces: 2.7V
• Power Dissipation Pd: 125W
• Collector Emitter Voltage V(br)ceo: 600V
• Transistor Case Style: TO-220AB
• No. Of Pins: 3
• Svhc: No SVHC
• Rohs Compliant: Yes
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: HGTP7N60A4_NL; HGTP7N60A4_NL

Typical Performance Curves
Test Circuit and Waveforms
©2004 Fairchild Semiconductor Corporation
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
0
10
10
C
10
FREQUENCY = 1MHz
RES
-1
-2
0
10
R
-5
0.05
0.02
0.01
G
0.5
0.2
0.1
C
C
VOLTAGE
V
= 25
IES
OES
CE
20
, COLLECTOR TO EMITTER VOLTAGE (V)
SINGLE PULSE
FIGURE 19. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
40
10
-4
L = 1mH
RHRP660
60
+
-
Unless Otherwise Specified (Continued)
V
80
10
DD
t
-3
1
, RECTANGULAR PULSE DURATION (s)
= 390V
100
10
-2
V
V
I
CE
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
GE
CE
2.8
2.6
2.4
2.2
2.0
1.8
9
FIGURE 21. SWITCHING TEST WAVEFORMS
vs GATE TO EMITTER VOLTAGE
10
t
10
d(OFF)I
90%
-1
V
GE
10%
HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B2
, GATE TO EMITTER VOLTAGE (V)
11
DUTY FACTOR, D = t
PEAK T
t
fI
I
I
CE
CE
I
CE
P
J
= 7A
= 3.5A
E
12
= 14A
D
= (P
OFF
90%
DUTY CYCLE < 0.5%, T
PULSE DURATION = 250 s,
D
10
X Z
t
13
0
E
1
t
ON2
JC
2
1
10%
/ t
X R
2
t
d(ON)I
14
JC
t
rI
) + T
C
J
15
= 25
10
1
o
C
16