HGTG30N60B3D Fairchild Semiconductor, HGTG30N60B3D Datasheet - Page 2

• Manufacturer Part Number: HGTG30N60B3D
• Description: IGBT N-CH UFS 600V 30A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG30N60B3D

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 30A
• Current - Collector (ic) (max): 60A
• Power - Max: 208W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Type: IGBT
• Dc Collector Current: 60A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 208W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

Absolute Maximum Ratings
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
Collector Current Continuous
Average Diode Forward Current at 110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Switching Safe Operating Area at T
Power Dissipation Total at T
Power Dissipation Derating T
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Short Circuit Withstand Time (Note 2) at V
Short Circuit Withstand Time (Note 2) at V
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
Electrical Specifications
©2004 Fairchild Semiconductor Corporation
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
1. Pulse width limited by maximum junction temperature.
2. V
At T
At T
CE(PK)
C
C
= 25
= 110
o
= 360V, T
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
PARAMETER
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
J
= 125
C
C
= 25
o
> 25
C, R
o
J
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
o
G
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 150
C
= 3
T
o
= 25
C
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
= 25
GE
GE
o
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
C, Unless Otherwise Specified
= 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
o
SYMBOL
V
V
Q
t
C, Unless Otherwise Specified
BV
t
CE(SAT)
d(OFF)I
SSOA
V
GE(TH)
d(ON)I
E
I
I
E
G(ON)
CES
GES
GEP
OFF
t
t
ON
CES
rI
fI
I
V
I
V
I
V
T
V
I
I
V
IGBT and Diode at T
I
V
V
R
L = 1mH,
Test Circuit (Figure 19)
C
C
C
C
C
CE
CE
GE
GE
J
GE
CE
CE
GE
G
= 250 A, V
= I
= 250 A, V
= I
= I
= 150
= 3 ,
= I
= BV
= 15V
= 20V
= 15V, L = 100 H
= 0.5 BV
= 0.8 BV
= 15V,
C110
C110
C110
C110
o
CES
C, R
, V
,
,
TEST CONDITIONS
,
CE
CES
CES
GE
CE
G
= 0.5 BV
= 3
= V
= 0V
,
J
GE
= 25
EC(AVG)
T
T
T
T
V
V
V
V
J
CES
, T
C
C
C
C
CE (PK)
CE (PK)
GE
GE
o
C,
C110
GEM
= 25
= 150
= 25
= 150
GES
CES
STG
C25
CM
SC
SC
= 15V
= 20V
D
L
o
o
C
C
o
o
= 480V
= 600V
C
C
HGTG30N60B3D
60A at 600V
-55 to 150
MIN
600
200
4.2
60
1.67
600
220
208
260
-
-
-
-
-
-
-
-
-
-
-
-
-
-
60
30
25
10
20
30
4
TYP
1.45
170
230
137
550
680
1.7
7.2
36
25
58
5
-
-
-
-
-
-
HGTG30N60B3D Rev. B2
MAX
250
190
250
800
900
1.9
2.1
250
3
6
-
-
-
-
-
-
-
-
UNITS
W/
o
o
W
V
A
A
A
A
V
V
C
C
UNITS
o
s
s
C
mA
nC
nC
nA
ns
ns
ns
ns
V
V
V
V
A
A
V
A
J
J