HGTG30N60B3D Fairchild Semiconductor, HGTG30N60B3D Datasheet - Page 4

• Manufacturer Part Number: HGTG30N60B3D
• Description: IGBT N-CH UFS 600V 30A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG30N60B3D

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 30A
• Current - Collector (ic) (max): 60A
• Power - Max: 208W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Type: IGBT
• Dc Collector Current: 60A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 208W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

Typical Performance Curves
©2004 Fairchild Semiconductor Corporation
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
100
225
200
175
150
125
100
0.1
10
6
5
4
3
2
1
0
75
50
25
1
10
0
5
0
P
f
f
R
R
DUTY CYCLE <0.5%, V
PULSE DURATION = 250 s
MAX1
MAX2
C
G
JC
= CONDUCTION DISSIPATION
= 3 , L = 1mH, V
(DUTY FACTOR = 50%)
= 0.6
= 0.05 / (t
= (P
EMITTER CURRENT
I
EMITTER CURRENT
T
V
CE
I
T
CE
C
CE
J
20
D
o
= -55
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
2
= 25
C/W, SEE NOTES
, COLLECTOR TO EMITTER VOLTAGE (V)
- P
C
10
o
d(OFF)I
o
) / (E
C, T
C
CE
J
ON
= 150
30
+ t
GE
4
= 480V
+ E
d(ON)I
T
= 10V
OFF
o
J
C, V
= 25
T
J
)
)
20
= 150
GE
o
C, T
40
110
110
6
= 10V
75
75
T
o
J
C
C, R
o
o
o
o
= 150
C
C
T
C
C
C
Unless Otherwise Specified (Continued)
G
= 25
V
15V
10V
15V
10V
o
= 3 , L = 1mH,
GE
C, V
V
50
T
o
8
CE
C
C
40
GE
= 150
= 480V
= 15V
o
C
60
10
60
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
20
18
16
14
12
10
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
350
300
250
200
150
100
8
6
50
0
10
0
10
0
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
V
T
R
J
CE
DUTY CYCLE <0.5%, V
PULSE DURATION = 250 s
G
= 150
= 3 , L = 1mH, V
= 360V, R
V
EMITTER CURRENT
11
GE
V
I
1
o
CE
CE
C, V
20
, GATE TO EMITTER VOLTAGE (V)
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER VOLTAGE (V)
GE
G
T
= 3 , T
2
C
= 10V OR 15V
12
= -55
CE
30
J
o
= 480V
GE
= 125
C
3
= 15V
T
13
o
J
T
C
C
= 25
= 25
4
40
I
o
SC
t
C, V
SC
o
C
14
HGTG30N60B3D Rev. B2
GE
5
T
= 10V OR 15V
C
50
= 150
15
6
o
500
450
400
350
300
250
200
150
C
60
7