HGTG30N60B3D Fairchild Semiconductor, HGTG30N60B3D Datasheet - Page 3

• Manufacturer Part Number: HGTG30N60B3D
• Description: IGBT N-CH UFS 600V 30A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG30N60B3D

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 30A
• Current - Collector (ic) (max): 60A
• Power - Max: 208W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Type: IGBT
• Dc Collector Current: 60A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 208W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

Electrical Specifications
NOTE:
Typical Performance Curves
©2004 Fairchild Semiconductor Corporation
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
Diode Forward Voltage
Diode Reverse Recovery Time
Thermal Resistance Junction To Case
3. Turn-Off Energy Loss (E
FIGURE 1. DC COLLECTOR CURRENT vs CASE
ending at the point where the collector current equals zero (I
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
60
50
40
30
20
10
0
25
PARAMETER
TEMPERATURE
50
T
C
, CASE TEMPERATURE (
OFF
75
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
T
C
= 25
100
o
C, Unless Otherwise Specified (Continued)
SYMBOL
t
t
d(OFF)I
o
d(ON)I
E
R
E
C)
V
Unless Otherwise Specified
OFF
t
t
t
ON
EC
rI
fI
rr
JC
125
V
GE
= 15V
IGBT and Diode at T
I
V
V
R
L = 1mH,
Test Circuit (Figure 19)
I
I
I
IGBT
Diode
CE
EC
EC
EC
CE
GE
G
= 3 ,
= I
= 30A
= 1A, dI
= 30A, dI
150
= 0.8 BV
= 15V,
CE
C110
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for
TEST CONDITIONS
,
EC
EC
CES
/dt = 200A/ s
/dt = 200A/ s
,
J
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
= 150
225
200
175
150
125
100
75
50
25
0
0
o
T
C,
J
= 150
100
V
o
CE
C, R
, COLLECTOR TO EMITTER VOLTAGE (V)
G
200
= 3 , V
MIN
-
-
-
-
-
-
-
-
-
-
-
GE
300
= 15V, L = 100 H
1300
1600
TYP
1.95
275
400
32
24
90
32
45
-
-
500
HGTG30N60B3D Rev. B2
MAX
1550
1900
320
150
2.5
0.6
1.3
40
55
-
-
600
UNITS
o
o
C/W
C/W
ns
ns
ns
ns
ns
ns
V
J
J
700