IXST30N60B2D1 IXYS, IXST30N60B2D1 Datasheet - Page 2

• Manufacturer Part Number: IXST30N60B2D1
• Description: IGBT HS W/DIODE 600V 48A TO268
• Manufacturer: IXYS

Specifications of IXST30N60B2D1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 24A
• Current - Collector (ic) (max): 48A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 48A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-268
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 48
• Ic90, Tc=90°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.5
• Tfi, Typ, Igbt, (ns): 140
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.18
• Rthjc, Max, Igbt, (k/w): 0.5
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Note 1:
Symbol
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
Reverse Diode (FRED)
Symbol
V
I
t
t
R
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
RM
d(on)
ri
d(off)
fi
d(on)
ri
d(off)
fi
rr
rr
fs
off
on
off
F
ies
oes
g
thJC
thCS
thJC
res
ge
gc
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
I
I
V
I
F
F
F
R
= 30A, V
= 50A, V
= 1 A; -di/dt = 100 A/µs; V
= 100 V
Inductive load, T
I
V
Switching times may increase for V
(Clamp) > 0.8 • V
increased R
Inductive load, T
I
V
Switching times may increase for
V
or increased R
Test Conditions
I
V
I
Test Conditions
C
C
f = 1 MHz
C
C
CE
CE
CE
CE
= 24A, V
= 24 A, V
= 24A; V
= 24A, V
= 400 V, R
= 400 V, R
(Clamp) > 0.8 • V
= 25 V, V
GE
GE
= 0 V
= 0 V, -di
GE
GE
GE
CE
G
GE
= 15 V
= 15 V, V
= 15 V
= 10 V, Note 1
G
G
G
= 0 V
4,835,592
4,850,072
4,881,106
= 5 Ω
= 5 Ω
CES
J
J
F
= 25° ° ° ° ° C
= 125° ° ° ° ° C
/dt = 100 A/µs
, higher T
CES
CE
R
, higher T
= 0.5 V
= 30 V
4,931,844
5,017,508
5,034,796
20N60B2D1
J
(T
(T
or
J
J
CES
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
J
5,049,961
5,063,307
5,187,117
CE
20N60B2D1
T
T
20N60B2
T
J
J
J
= 100°C
= 100°C 150
=150°C
5,237,481
5,381,025
5,486,715
min.
min.
7.0
Characteristic Values
Characteristic Values
1220
12.0
0.55
0.32
0.82
1.18
0.21
typ.
typ.
110
140
130
140
202
234
2.0
6,162,665
6,259,123 B1
6,306,728 B1
30
42
50
23
15
30
30
30
50
max.
0.50 K/W
280
300
1.6
2.5
2.5
0.9 K/W
1.0 mJ
max.
6,404,065 B1
6,534,343
6,583,505
K/W
nC
nC
nC
mJ
mJ
mJ
pF
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
S
V
V
A
TO-247 (IXSH) Outline
TO-268 (IXST) Outline
6,683,344
6,710,405B2
6,710,463
Terminals: 1 - Gate
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
1
2
1
2
IXSH 30N60B2D1
IXST 30N60B2D1
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
Min.
6,727,585
6,759,692
4.7
2.2
2.2
1.0
1
Millimeter
.4
2
3
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.3
2.6
1.4
.8
0.205 0.225
0.232 0.252
2 - Drain
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
Min.
Inches
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144