IXST30N60B2D1 IXYS, IXST30N60B2D1 Datasheet - Page 6

• Manufacturer Part Number: IXST30N60B2D1
• Description: IGBT HS W/DIODE 600V 48A TO268
• Manufacturer: IXYS

Specifications of IXST30N60B2D1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 24A
• Current - Collector (ic) (max): 48A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 48A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-268
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 48
• Ic90, Tc=90°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.5
• Tfi, Typ, Igbt, (ns): 140
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.18
• Rthjc, Max, Igbt, (k/w): 0.5
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig. 21. Dynamic parameters Q
Fig. 18. Forward current I
Fig. 20. Dynamic parameters Q
Z
Fig. 24. Transient thermal resistance junction to case
I
0.001
F
K
thJC
0.01
K/W
f
2.0
1.5
1.0
0.5
0.0
0.1
0.00001
A
60
50
40
30
20
10
0
1
0
0
T
T
VJ
VJ
=100°C
=150°C
40
1
I
RM
Q
r
0.0001
80
2
T
VJ
T
V
120
VJ
F
F
=25°C
versus V
3
°C
0.001
r
, I
V
r
160
, I
RM
RM
F
t
Q
rr
1000
Fig. 19. Reverse recovery charge
Fig. 22. Recovery time t
r
800
600
400
200
nC
90
80
70
60
ns
0
100
0.01
0
T
VJ
= 100°C
200
I
I
I
F
F
F
400
= 60A
= 30A
= 15A
I
I
I
0.1
F
F
F
= 60A
= 30A
= 15A
-di
600
F
-di
/dt
T
t
F
VJ
/dt
= 100°C
A/µs
s
800
rr
A/µs
DSEP 29-06
versus
1000
1000
1
I
V
RM
FR
Fig. 20. Peak reverse current I
Constants for Z
30
25
20
15
10
20
15
10
Fig. 23. Peak forward voltage V
A
V
5
0
5
0
1
2
0
0
i
T
t
T
fr
VJ
VJ
= 100°C
= 100°C
200
200
IXSH 30N60B2D1
IXST 30N60B2D1
I
I
I
F
F
F
R
0.502
0.193
= 60A
= 30A
= 15A
400
400
thi
thJC
(K/W)
V
FR
calculation:
600
600
di
-di
F
/dt
F
/dt
A/µs
A/µs
800
800
t
0.0052
0.0003
i
(s)
1000
1000
RM
1.00
0.75
0.50
0.25
0.00
µs
FR
t
fr