IXST30N60B2D1 IXYS, IXST30N60B2D1 Datasheet - Page 4

• Manufacturer Part Number: IXST30N60B2D1
• Description: IGBT HS W/DIODE 600V 48A TO268
• Manufacturer: IXYS

Specifications of IXST30N60B2D1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 24A
• Current - Collector (ic) (max): 48A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 48A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-268
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 48
• Ic90, Tc=90°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.5
• Tfi, Typ, Igbt, (ns): 140
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.18
• Rthjc, Max, Igbt, (k/w): 0.5
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

550
500
450
400
350
300
250
200
150
3.0
2.5
2.0
1.5
1.0
0.5
0.0
18
16
14
12
10
8
6
4
2
0
10
0
0
R
V
V
t
t
T
V
V
10
Fig. 11. Dependence of Turn-off
d(off)
fi
J
Fig. 9. Dependence of Turn-Off
GE
CE
GE
CE
G
15
Fig. 7. Transconductance
= 125ºC
- - - - - -
20
= 5Ω
= 15V
= 400V
= 15V
= 400V
20
Sw itching Tim e on R
20
Energy Loss on I
30
40
I
I
25
C
R
I
C
40
T
C
- Amperes
J
G
- Amperes
= 12A
= -40
- Ohms
125
I
25
60
30
C
50
= 12A
º
º
T
º
C
C
J
C
= 125
60
35
I
C
80
= 24A
T
70
C
º
J
C
40
G
= 25
80
100
º
C
I
45
C
90
= 48A
120
100
50
260
240
220
200
180
160
140
120
100
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
25
0
Fig. 12. Dependence of Turn-off
R
V
V
35
10
Fig. 10. Dependence of Turn-off
Fig. 8. Dependence of Turn-off
T
V
V
15
Energy Loss on Tem perature
GE
CE
G
J
GE
CE
= 125
= 5Ω
= 15V
= 400V
45
20
= 15V
= 400V
Sw itching Tim e on I
T
20
Energy Loss on R
J
º
C
55
30
- Degrees Centigrade
I
T
R
25
C
J
65
40
G
- Amperes
= 125
- Ohms
IXSH 30N60B2D1
IXST 30N60B2D1
75
30
50
º
T
C
J
= 25
60
85
35
I
C
º
C
95
70
= 48A
G
C
I
40
C
t
t
R
V
V
d(off)
fi
GE
CE
105 115 125
G
I
I
I
80
= 24A
C
C
C
I
- - - - - -
= 5Ω
C
= 12A
= 48A
= 24A
= 15V
= 400V
= 12A
45
90
100
50