HGTG12N60A4 Fairchild Semiconductor, HGTG12N60A4 Datasheet - Page 2

• Manufacturer Part Number: HGTG12N60A4
• Description: IGBT N-CH SMPS 600V 54A TO247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG12N60A4

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 12A
• Current - Collector (ic) (max): 54A
• Power - Max: 167W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.1 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 54 A
• Gate-emitter Leakage Current: +/- 250 nA
• Power Dissipation: 167 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 54 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 54A
• Collector Emitter Voltage Vces: 2.7V
• Power Dissipation Pd: 167W
• Collector Emitter Voltage V(br)ceo: 600V
• Transistor Case Style: TO-247
• No. Of Pins: 3
• Svhc: No SVHC
• Rohs Compliant: Yes
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: HGTG12N60A4_NL; HGTG12N60A4_NL

Absolute Maximum Ratings
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
Collector Current Continuous
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Switching Safe Operating Area at T
Power Dissipation Total at T
Power Dissipation Derating T
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Lead Temperature for Soldering
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
Electrical Specifications
©2003 Fairchild Semiconductor Corporation
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 2)
1. Pulse width limited by maximum junction temperature.
At T
At T
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
C
C
= 25
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
o
PARAMETER
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .C110
C
C
= 25
> 25
o
J
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
o
T
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 150
J
T
= 25
C
= 25
o
o
C, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA
C, Unless Otherwise Specified
o
C, Unless Otherwise Specified
SYMBOL
V
V
t
BV
BV
Q
t
d(OFF)I
CE(SAT)
SSOA
GE(TH)
V
E
E
E
d(ON)I
I
I
GES
g(ON)
CES
GEP
ON1
ON2
OFF
t
t
CES
ECS
rI
fI
I
I
V
I
V
I
V
T
L = 100 H, V
I
I
V
IGBT and Diode at T
I
V
V
R
L = 500 H
Test Circuit (Figure 20)
C
C
C
C
C
C
CE
GE
GE
J
GE
CE
CE
CE
G
= 250 A, V
= -10mA, V
= 12A,
= 250 A, V
= 12A, V
= 12A,
= 150
= 10
= 12A
= 600V
= 15V
= 20V
= 300V
= 390V
=15V
o
TEST CONDITIONS
C, R
CE
CE
GE
CE
GE
G
= 300V
= 600V
= 10
= 0V
= 600V
= 0V
J
T
T
T
T
V
V
J
= 25
, T
J
J
J
J
GE
GE
V
= 25
= 125
= 25
= 125
GEM
GES
PKG
CES
STG
GE
C25
CM
= 15V
= 20V
o
C
D
L
o
o
= 15V
C
C
o
o
HGTG12N60A4, HGTP12N60A4,
C
C
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2
HGT1S12N60A4S9A
60A at 600V
-55 to 150
MIN
600
20
60
1.33
600
167
300
260
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
54
23
96
20
30
TYP
160
2.0
1.6
5.6
78
97
17
96
18
55
50
8
8
-
-
-
-
-
-
MAX
250
120
2.0
2.7
2.0
250
96
-
-
-
-
-
-
-
-
-
-
-
-
UNITS
W/
o
o
o
W
V
A
A
A
V
V
C
C
C
UNITS
o
C
mA
nC
nC
nA
ns
ns
ns
ns
V
V
V
V
V
A
V
A
J
J
J