HGTG12N60A4 Fairchild Semiconductor, HGTG12N60A4 Datasheet - Page 6

• Manufacturer Part Number: HGTG12N60A4
• Description: IGBT N-CH SMPS 600V 54A TO247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG12N60A4

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 12A
• Current - Collector (ic) (max): 54A
• Power - Max: 167W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.1 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 54 A
• Gate-emitter Leakage Current: +/- 250 nA
• Power Dissipation: 167 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 54 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 54A
• Collector Emitter Voltage Vces: 2.7V
• Power Dissipation Pd: 167W
• Collector Emitter Voltage V(br)ceo: 600V
• Transistor Case Style: TO-247
• No. Of Pins: 3
• Svhc: No SVHC
• Rohs Compliant: Yes
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: HGTG12N60A4_NL; HGTG12N60A4_NL

Typical Performance Curves
Test Circuit and Waveforms
©2003 Fairchild Semiconductor Corporation
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
3.0
2.5
2.0
1.5
1.0
0.5
0
0
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
10
10
FREQUENCY = 1MHz
10
-1
-2
C
0
10
RES
R
-5
G
0.05
0.02
0.01
V
VOLTAGE
0.5
0.2
0.1
= 10
CE
5
, COLLECTOR TO EMITTER VOLTAGE (V)
C
C
IES
OES
SINGLE PULSE
FIGURE 19. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
10
10
-4
L = 500 H
RHRP660
15
+
-
Unless Otherwise Specified (Continued)
V
20
10
DD
t
1
-3
= 390V
, RECTANGULAR PULSE DURATION (s)
25
10
-2
V
V
I
CE
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
GE
CE
2.4
2.3
2.2
2.1
2.0
1.9
8
FIGURE 21. SWITCHING TEST WAVEFORMS
9
vs GATE TO EMITTER VOLTAGE
t
d(OFF)I
10
90%
V
-1
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2
GE
10%
10
, GATE TO EMITTER VOLTAGE (V)
DUTY FACTOR, D = t
PEAK T
t
fI
DUTY CYCLE < 0.5%, V
PULSE DURATION = 250 s, T
11
P
J
E
D
OFF
= (P
90%
12
D
10
X Z
t
0
E
1
t
ON2
2
13
JC
1
10%
/ t
X R
t
2
d(ON)I
I
I
I
CE
GE
CE
CE
14
JC
t
= 18A
rI
= 15V
= 12A
= 6A
) + T
J
= 25
C
15
10
o
C
1
16