HGTG12N60A4 Fairchild Semiconductor, HGTG12N60A4 Datasheet - Page 3

• Manufacturer Part Number: HGTG12N60A4
• Description: IGBT N-CH SMPS 600V 54A TO247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG12N60A4

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 12A
• Current - Collector (ic) (max): 54A
• Power - Max: 167W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.1 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 54 A
• Gate-emitter Leakage Current: +/- 250 nA
• Power Dissipation: 167 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 54 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 54A
• Collector Emitter Voltage Vces: 2.7V
• Power Dissipation Pd: 167W
• Collector Emitter Voltage V(br)ceo: 600V
• Transistor Case Style: TO-247
• No. Of Pins: 3
• Svhc: No SVHC
• Rohs Compliant: Yes
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: HGTG12N60A4_NL; HGTG12N60A4_NL

Electrical Specifications
NOTES:
Typical Performance Curves
©2003 Fairchild Semiconductor Corporation
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 2)
Thermal Resistance Junction To Case
2. Turn-Off Energy Loss (E
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
FIGURE 1. DC COLLECTOR CURRENT vs CASE
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
500
300
100
at the point where the collector current equals zero (I
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
Figure 20.
60
50
40
30
20
10
10
0
25
1
T
J
P
f
f
R
= 125
MAX1
MAX2
C
ØJC
= CONDUCTION DISSIPATION
PARAMETER
TEMPERATURE
EMITTER CURRENT
I
(DUTY FACTOR = 50%)
o
CE
= 0.75
= 0.05 / (t
= (P
C, R
50
, COLLECTOR TO EMITTER CURRENT (A)
D
G
T
o
- P
= 10 , L = 500 H, V
C
C/W, SEE NOTES
, CASE TEMPERATURE (
C
d(OFF)I
3
) / (E
OFF
75
ON2
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
+ t
d(ON)I
+ E
T
J
OFF
= 25
)
100
CE
)
o
C, Unless Otherwise Specified (Continued)
= 390V
10
Unless Otherwise Specified
o
SYMBOL
t
C)
V
t
d(OFF)I
E
E
E
d(ON)I
R
GE
ON1
ON2
OFF
t
t
125
rI
fI
JC
= 15V
75
T
C
o
CE
C
20
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
V
15V
GE
IGBT and Diode at T
I
V
V
R
L = 500 H
Test Circuit (Figure 20)
CE
150
GE
CE
G
30
= 10
= 12A
= 390V
= 15V
TEST CONDITIONS
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
20
18
16
14
12
10
70
60
50
40
30
20
10
J
8
6
4
2
0
0
= 125
0
9
T
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
J
V
= 150
CE
o
C
100
V
= 390V, R
10
o
CE
V
C, R
GE
, COLLECTOR TO EMITTER VOLTAGE (V)
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2
ON1
, GATE TO EMITTER VOLTAGE (V)
J
G
as the IGBT. The diode type is specified in
200
= 10 , V
11
G
is the turn-on loss of the IGBT only. E
= 10 , T
MIN
-
-
-
-
-
-
-
-
GE
300
12
J
= 15V, L = 200 H
= 125
TYP
110
250
175
400
17
16
70
55
o
-
13
C
I
t
SC
SC
500
MAX
14
0.75
170
350
285
95
-
-
-
600
15
UNITS
o
300
275
250
225
200
175
150
125
100
75
50
C/W
ns
ns
ns
ns
J
J
J
ON2
700