HGTP20N60A4 Fairchild Semiconductor, HGTP20N60A4 Datasheet - Page 3

• Manufacturer Part Number: HGTP20N60A4
• Description: IGBT N-CH SMPS 600V 70A TO220AB
• Manufacturer: Fairchild Semiconductor

Specifications of HGTP20N60A4

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 20A
• Current - Collector (ic) (max): 70A
• Power - Max: 290W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.8 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 70 A
• Gate-emitter Leakage Current: +/- 250 nA
• Power Dissipation: 290 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 70 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Voltage, Vces: 600V
• Current, Ic Continuous A Max: 70A
• Voltage, Vce Sat Max: 2.7V
• Case Style: TO-220AB
• Current, Icm Pulsed: 280A
• Pin Format: GCE
• Pins, No. Of: 3
• Rohs Compliant: Yes
• Dc Collector Current: 70A
• Collector Emitter Voltage Vces: 2.7V
• Power Dissipation Pd: 290W
• Collector Emitter Voltage V(br)ceo: 600V
• Transistor Case Style: TO-220AB
• No. Of Pins: 3
• Svhc: No SVHC
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: HGTP20N60A4_NL; HGTP20N60A4_NL

Electrical Specifications
NOTES:
Typical Performance Curves
©2001 Fairchild Semiconductor Corporation
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 2)
Thermal Resistance Junction To Case
2. Turn-Off Energy Loss (E
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
FIGURE 1. DC COLLECTOR CURRENT vs CASE
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
100
at the point where the collector current equals zero (I
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
Figure 20.
500
300
100
80
60
40
20
40
0
25
5
P
T
f
f
R
PACKAGE LIMIT
MAX1
MAX2
C
J
ØJC
= 125
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
PARAMETER
TEMPERATURE
= 0.43
EMITTER CURRENT
= 0.05 / (t
= (P
I
CE
o
C, R
50
, COLLECTOR TO EMITTER CURRENT (A)
D
o
- P
C/W, SEE NOTES
T
G
C
C
d(OFF)I
= 3 , L = 500 H, V
10
, CASE TEMPERATURE (
) / (E
DIE CAPABILITY
OFF
ON2
75
+ t
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
d(ON)I
+ E
T
OFF
J
= 25
)
)
100
CE
20
o
= 390V
C, Unless Otherwise Specified (Continued)
Unless Otherwise Specified
o
SYMBOL
C)
t
t
d(OFF)I
E
E
d(ON)I
E
R
30
125
ON1
ON2
OFF
t
t
rI
fI
JC
75
T
V
C
GE
o
CE
C
= 15V
40
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
V
15V
GE
IGBT and Diode at T
I
V
V
R
L = 500 H
Test Circuit (Figure 20)
150
CE
50
CE
GE
G
= 3
= 20A
= 390V
= 15V
TEST CONDITIONS
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
120
100
14
12
10
80
60
40
20
J
8
6
4
2
0
0
= 125
10
0
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
T
J
= 150
o
C
100
V
CE
V
o
11
V
GE
C, R
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
, GATE TO EMITTER VOLTAGE (V)
ON1
J
G
= 390V, R
200
as the IGBT. The diode type is specified in
= 3 , V
is the turn-on loss of the IGBT only. E
12
MIN
-
-
-
-
-
-
-
-
GE
300
G
= 3 , T
= 15V, L = 100 H
13
HGTG20N60A4, HGTP20N60A4 Rev. B
TYP
400
105
115
510
330
J
15
13
55
-
= 125
I
t
SC
SC
o
14
500
C
MAX
0.43
135
600
500
21
18
73
-
600
15
450
400
350
300
250
200
150
100
UNITS
o
C/W
ns
ns
ns
ns
J
J
J
700
ON2