HGTP20N60A4 Fairchild Semiconductor, HGTP20N60A4 Datasheet - Page 4

• Manufacturer Part Number: HGTP20N60A4
• Description: IGBT N-CH SMPS 600V 70A TO220AB
• Manufacturer: Fairchild Semiconductor

Specifications of HGTP20N60A4

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 20A
• Current - Collector (ic) (max): 70A
• Power - Max: 290W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.8 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 70 A
• Gate-emitter Leakage Current: +/- 250 nA
• Power Dissipation: 290 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 70 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Voltage, Vces: 600V
• Current, Ic Continuous A Max: 70A
• Voltage, Vce Sat Max: 2.7V
• Case Style: TO-220AB
• Current, Icm Pulsed: 280A
• Pin Format: GCE
• Pins, No. Of: 3
• Rohs Compliant: Yes
• Dc Collector Current: 70A
• Collector Emitter Voltage Vces: 2.7V
• Power Dissipation Pd: 290W
• Collector Emitter Voltage V(br)ceo: 600V
• Transistor Case Style: TO-220AB
• No. Of Pins: 3
• Svhc: No SVHC
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: HGTP20N60A4_NL; HGTP20N60A4_NL

Typical Performance Curves
©2001 Fairchild Semiconductor Corporation
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
1400
1200
1000
800
600
400
200
100
22
20
18
16
14
12
10
80
60
40
20
8
0
0
5
0
5
R
DUTY CYCLE < 0.5%, V
PULSE DURATION = 250 s
R
T
G
T
J
G
J
= 3 , L = 500 H, V
= 125
= 3 , L = 500 H, V
= 25
EMITTER CURRENT
EMITTER CURRENT
0.4
I
10
CE
V
I
10
CE
CE
, COLLECTOR TO EMITTER CURRENT (A)
o
o
, COLLECTOR TO EMITTER CURRENT (A)
C, T
, COLLECTOR TO EMITTER VOLTAGE (V)
C, V
0.8
T
J
15
GE
J
15
= 125
T
= 150
T
J
= 12V, V
J
= 125
1.2
= 25
o
CE
o
C, V
20
CE
C
20
GE
T
o
= 390V
o
J
GE
C, T
C
GE
= 390V
= 25
= 12V
1.6
= 15V
J
= 12V
o
= 125
25
C, V
25
T
2.0
J
GE
o
= 25
C, V
Unless Otherwise Specified (Continued)
= 12V, V
30
30
o
GE
2.4
C
= 15V
GE
35
35
2.8
= 15V
3.2
40
40
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
100
800
700
600
500
400
300
200
100
80
60
40
20
36
32
28
24
20
16
12
0
0
8
4
0
5
5
DUTY CYCLE < 0.5%, V
PULSE DURATION = 250 s
R
G
R
T
G
= 3 , L = 500 H, V
J
= 3 , L = 500 H, V
= 125
EMITTER CURRENT
EMITTER CURRENT
0.4
V
10
10
I
CE
I
CE
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
o
C, V
0.8
15
T
15
GE
J
T
= 25
J
T
= 12V OR 15V
T
= 150
J
J
CE
o
= 125
= 25
1.2
C, T
GE
20
CE
20
= 390V
o
= 15V
C
= 390V
o
J
T
o
C OR T
C
J
= 125
HGTG20N60A4, HGTP20N60A4 Rev. B
= 25
1.6
25
25
o
o
J
C, V
C, V
= 125
T
J
GE
GE
2.0
30
= 25
30
o
= 12V
= 12V OR 15V
C, V
o
C
GE
2.4
35
35
= 15V
2.8
40
40