HGTP20N60A4 Fairchild Semiconductor, HGTP20N60A4 Datasheet - Page 4
![IGBT N-CH SMPS 600V 70A TO220AB](/photos/5/31/53154/261-to-220ab-3_sml.jpg)
HGTP20N60A4
Manufacturer Part Number
HGTP20N60A4
Description
IGBT N-CH SMPS 600V 70A TO220AB
Manufacturer
Fairchild Semiconductor
Datasheet
1.HGTG20N60A4.pdf
(8 pages)
Specifications of HGTP20N60A4
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 20A
Current - Collector (ic) (max)
70A
Power - Max
290W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Collector- Emitter Voltage Vceo Max
600 V
Collector-emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
+/- 20 V
Continuous Collector Current At 25 C
70 A
Gate-emitter Leakage Current
+/- 250 nA
Power Dissipation
290 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
70 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Transistor Type
IGBT
Voltage, Vces
600V
Current, Ic Continuous A Max
70A
Voltage, Vce Sat Max
2.7V
Case Style
TO-220AB
Current, Icm Pulsed
280A
Pin Format
GCE
Pins, No. Of
3
Rohs Compliant
Yes
Dc Collector Current
70A
Collector Emitter Voltage Vces
2.7V
Power Dissipation Pd
290W
Collector Emitter Voltage V(br)ceo
600V
Transistor Case Style
TO-220AB
No. Of Pins
3
Svhc
No SVHC
Operating Temperature Range
-55°C To +150°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
HGTP20N60A4_NL
HGTP20N60A4_NL
HGTP20N60A4_NL
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
HGTP20N60A4
Manufacturer:
TOSHIBA
Quantity:
20 000
Typical Performance Curves
©2001 Fairchild Semiconductor Corporation
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
1400
1200
1000
800
600
400
200
100
22
20
18
16
14
12
10
80
60
40
20
8
0
0
5
0
5
R
DUTY CYCLE < 0.5%, V
PULSE DURATION = 250 s
R
T
G
T
J
G
J
= 3 , L = 500 H, V
= 125
= 3 , L = 500 H, V
= 25
EMITTER CURRENT
EMITTER CURRENT
0.4
I
10
CE
V
I
10
CE
CE
, COLLECTOR TO EMITTER CURRENT (A)
o
o
, COLLECTOR TO EMITTER CURRENT (A)
C, T
, COLLECTOR TO EMITTER VOLTAGE (V)
C, V
0.8
T
J
15
GE
J
15
= 125
T
= 150
T
J
= 12V, V
J
= 125
1.2
= 25
o
CE
o
C, V
20
CE
C
20
GE
T
o
= 390V
o
J
GE
C, T
C
GE
= 390V
= 25
= 12V
1.6
= 15V
J
= 12V
o
= 125
25
C, V
25
T
2.0
J
GE
o
= 25
C, V
Unless Otherwise Specified (Continued)
= 12V, V
30
30
o
GE
2.4
C
= 15V
GE
35
35
2.8
= 15V
3.2
40
40
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
100
800
700
600
500
400
300
200
100
80
60
40
20
36
32
28
24
20
16
12
0
0
8
4
0
5
5
DUTY CYCLE < 0.5%, V
PULSE DURATION = 250 s
R
G
R
T
G
= 3 , L = 500 H, V
J
= 3 , L = 500 H, V
= 125
EMITTER CURRENT
EMITTER CURRENT
0.4
V
10
10
I
CE
I
CE
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
o
C, V
0.8
15
T
15
GE
J
T
= 25
J
T
= 12V OR 15V
T
= 150
J
J
CE
o
= 125
= 25
1.2
C, T
GE
20
CE
20
= 390V
o
= 15V
C
= 390V
o
J
T
o
C OR T
C
J
= 125
HGTG20N60A4, HGTP20N60A4 Rev. B
= 25
1.6
25
25
o
o
J
C, V
C, V
= 125
T
J
GE
GE
2.0
30
= 25
30
o
= 12V
= 12V OR 15V
C, V
o
C
GE
2.4
35
35
= 15V
2.8
40
40