HGTP20N60A4 Fairchild Semiconductor, HGTP20N60A4 Datasheet - Page 5
![IGBT N-CH SMPS 600V 70A TO220AB](/photos/5/31/53154/261-to-220ab-3_sml.jpg)
HGTP20N60A4
Manufacturer Part Number
HGTP20N60A4
Description
IGBT N-CH SMPS 600V 70A TO220AB
Manufacturer
Fairchild Semiconductor
Datasheet
1.HGTG20N60A4.pdf
(8 pages)
Specifications of HGTP20N60A4
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 20A
Current - Collector (ic) (max)
70A
Power - Max
290W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Collector- Emitter Voltage Vceo Max
600 V
Collector-emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
+/- 20 V
Continuous Collector Current At 25 C
70 A
Gate-emitter Leakage Current
+/- 250 nA
Power Dissipation
290 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
70 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Transistor Type
IGBT
Voltage, Vces
600V
Current, Ic Continuous A Max
70A
Voltage, Vce Sat Max
2.7V
Case Style
TO-220AB
Current, Icm Pulsed
280A
Pin Format
GCE
Pins, No. Of
3
Rohs Compliant
Yes
Dc Collector Current
70A
Collector Emitter Voltage Vces
2.7V
Power Dissipation Pd
290W
Collector Emitter Voltage V(br)ceo
600V
Transistor Case Style
TO-220AB
No. Of Pins
3
Svhc
No SVHC
Operating Temperature Range
-55°C To +150°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
HGTP20N60A4_NL
HGTP20N60A4_NL
HGTP20N60A4_NL
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
HGTP20N60A4
Manufacturer:
TOSHIBA
Quantity:
20 000
Typical Performance Curves
©2001 Fairchild Semiconductor Corporation
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
240
200
160
120
120
110
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
80
40
90
80
70
60
0
0
6
25
5
DUTY CYCLE < 0.5%, V
PULSE DURATION = 250 s
R
FIGURE 13. TRANSFER CHARACTERISTIC
E
R
G
TOTAL
G
= 3 , L = 500 H, V
= 3 , L = 500 H, V
EMITTER CURRENT
TEMPERATURE
I
10
CE
7
= E
, COLLECTOR TO EMITTER CURRENT (A)
50
V
ON2
V
GE
V
GE
GE
T
T
15
, GATE TO EMITTER VOLTAGE (V)
J
C
+ E
= 12V, V
= 125
, CASE TEMPERATURE (
= 12V, V
8
OFF
T
75
J
CE
o
CE
CE
20
= 25
C
I
I
I
CE
CE
CE
GE
GE
= 390V
= 390V, V
= 10V
= 30A
= 20A
= 10A
o
= 15V, T
9
= 15V, T
C
T
25
J
100
= -55
GE
J
J
10
= 125
= 25
o
= 15V
Unless Otherwise Specified (Continued)
C
30
o
o
o
C)
C
C
125
11
35
150
12
40
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
16
14
12
10
0.1
8
6
4
2
0
10
80
72
64
56
48
40
32
24
16
1
0
3
5
I
G(REF)
E
T
R
TOTAL
J
FIGURE 14. GATE CHARGE WAVEFORMS
G
= 125
V
= 3 , L = 500 H, V
20
CE
CURRENT
I
10
= 1mA, R
CE
= E
= 600V
o
V
C, L = 500 H, V
, COLLECTOR TO EMITTER CURRENT (A)
10
CE
ON2
40
I
I
I
CE
CE
CE
T
= 200V
T
15
J
+ E
J
L
R
= 30A
= 20A
= 10A
Q
= 125
= 25
G
= 15 , T
G
OFF
, GATE RESISTANCE ( )
60
, GATE CHARGE (nC)
V
o
CE
CE
o
C, V
C, V
20
CE
= 400V
= 390V
J
GE
80
= 25
GE
= 390V, V
HGTG20N60A4, HGTP20N60A4 Rev. B
= 12V OR 15V
= 12V OR 15V
o
25
C
100
100
GE
= 15V
30
120
140
35
1000
160
40