APT11GF120BRDQ1G Microsemi Power Products Group, APT11GF120BRDQ1G Datasheet - Page 3

• Manufacturer Part Number: APT11GF120BRDQ1G
• Description: IGBT 1200V 25A 156W TO247
• Manufacturer: Microsemi Power Products Group

Specifications of APT11GF120BRDQ1G

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 8A
• Current - Collector (ic) (max): 25A
• Power - Max: 156W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 7, Threshold Voltage vs. Junction Temperature
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
30
25
20
15
10
30
25
20
15
10
5
0
5
0
6
5
4
3
2
1
0
-50 -25
FIGURE 1, Output Characteristics(T
V
0
0
8
CE
V
GE
V
TEST<0.5 % DUTY
V
T
, COLLECTER-TO-EMITTER VOLTAGE (V)
GE
FIGURE 3, Transfer Characteristics
GE
J
250µs PULSE
T
= 15V
= 125°C
J
1
2
, GATE-TO-EMITTER VOLTAGE (V)
CYCLE
, GATE-TO-EMITTER VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
T
T
J
J
10
= 125°C
0
= 25°C
2
4
T
T
J
25
J
= 25°C
= -55°C
3
6
12
50
T
J
= -55°C
4
8
75
10
5
100 125 150
14
J
12
6
= 25°C)
16
14
7
FIGURE 8, DC Collector Current vs Case Temperature
FIGURE 6, On State Voltage vs Junction Temperature
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
40
35
30
25
20
15
10
16
14
12
10
35
30
25
20
15
10
FIGURE 2, Output Characteristics (T
5
0
8
6
4
2
0
0
5
0
-50
V
0
0
0
CE
T
<0.5 % DUTY CYCLE
250µs PULSE TEST
I
J
, COLLECTER-TO-EMITTER VOLTAGE (V)
C
= 25°C
-25
= 8A
10
V
25
T
GE
T
C
J
= 15V.
, Junction Temperature (°C)
, CASE TEMPERATURE (°C)
20
FIGURE 4, Gate Charge
V
0
V
CE
GATE CHARGE (nC)
CE
50
5
= 240V
30
25
= 600V
40
75
50
50
75 100 125 150
15V
100
14V
10
13V
12V
60
V
CE
125
9V
J
= 960V
8V
70
= 125°C)
150
15
80