APT11GF120BRDQ1G Microsemi Power Products Group, APT11GF120BRDQ1G Datasheet - Page 9

• Manufacturer Part Number: APT11GF120BRDQ1G
• Description: IGBT 1200V 25A 156W TO247
• Manufacturer: Microsemi Power Products Group

Specifications of APT11GF120BRDQ1G

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 8A
• Current - Collector (ic) (max): 25A
• Power - Max: 156W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
TYPICAL PERFORMANCE CURVES
1
4
5
2
3
I
di
I
t rr - Reverse R ecovery Time, measured from zero crossing where diode
Q rr - Area Under the Curve Defined by I
F
RRM
F
- Forward Conduction Current
/dt - Rate of Diode Current Change Through Zero Crossing.
line through I
current goes from positive to negative, to the point at which the straight
- Maximum Reverse Recovery Current.
+18V
0V
RRM
and 0.25 I
RRM
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
passes through zero.
Figure 33, Diode Reverse Recovery Waveform and Definitions
RRM
Dimensions in Millimeters and (Inches)
and t rr .
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
di
F
20.80 (.819)
21.46 (.845)
19.81 (.780)
20.32 (.800)
/dt Adjust
Figure 32. Diode Test Circuit
6.15 (.242) BSC
4.50 (.177) Max.
1.01 (.040)
1.40 (.055)
30µH
5.45 (.215) BSC
Zero
2-Plcs.
V r
APT10078BLL
1
TRANSFORMER
PEARSON 2878
15.49 (.610)
16.26 (.640)
CURRENT
2
D.U.T.
5.38 (.212)
6.20 (.244)
1.65 (.065)
2.13 (.084)
3
3.55 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
Gate
Collector
(Cathode)
Emitter
(Anode)
APT11GF120BRDQ1(G)
4
5
t rr / Q rr
Waveform
0.25 I RRM