APT11GF120BRDQ1G Microsemi Power Products Group, APT11GF120BRDQ1G Datasheet - Page 4

• Manufacturer Part Number: APT11GF120BRDQ1G
• Description: IGBT 1200V 25A 156W TO247
• Manufacturer: Microsemi Power Products Group

Specifications of APT11GF120BRDQ1G

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 8A
• Current - Collector (ic) (max): 25A
• Power - Max: 156W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 11, Current Rise Time vs Collector Current
I
I
CE
CE
I
CE
V
T
R
L = 100µH
R
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
J
, COLLECTOR TO EMITTER CURRENT (A)
CE
G
G
T
= 25°C
= 10Ω
J
=
= 800V
R
=
10Ω, L
G
25 or 125°C,V
, GATE RESISTANCE (OHMS)
,
or 125°C
=
100
V
µ
GE
H, V
GE
= 15V
CE
=
15V
=
800V
FIGURE 16, Switching Energy Losses vs Junction Temperature
FIGURE 14, Turn Off Energy Loss vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
I
CE
CE
I
CE
V
R
L = 100µH
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
CE
G
=
T
=
V
J
10Ω
GE
, JUNCTION TEMPERATURE (°C)
800V
=15V,T
J
=125°C
V
GE
=15V,T
J
=25°C