IRG4BC30FD-SPBF International Rectifier, IRG4BC30FD-SPBF Datasheet

IGBT W/DIODE 600V 31A D2PAK

IRG4BC30FD-SPBF

Manufacturer Part Number
IRG4BC30FD-SPBF
Description
IGBT W/DIODE 600V 31A D2PAK
Manufacturer
International Rectifier
Datasheets

Specifications of IRG4BC30FD-SPBF

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.8V @ 15V, 17A
Current - Collector (ic) (max)
31A
Power - Max
100W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Type
IGBT
Dc Collector Current
31A
Collector Emitter Voltage Vces
1.8V
Power Dissipation Pd
100W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Package
D2-Pak
Circuit
Co-Pack
Switching
Hard
Switching Speed
FAST 1-8 kHz
Vces (v)
600
Ic @ 25c (a)
31
Ic @ 100c (a)
17
Vce(on)@25c Typ (v)
1.59
Vce(on)@25c Max (v)
1.80
Ets Typ (mj)
2.02
Ets Max (mj)
3.9
Qrr Typ Nc 25c
80
Qrr Max Nc 25c
180
Vf Typ
1.40
Pd @25c (w)
100
Environmental Options
PbF and Leaded
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Other names
*IRG4BC30FD-SPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRG4BC30FD-SPBF
Manufacturer:
IR
Quantity:
12 000
INSULATED GATE BIPOLAR TRANSISTOR WITH
HYPERFAST DIODE
V
I
I
I
I
I
I
V
P
P
T
T
R
R
R
Wt
Absolute Maximum Ratings
Thermal / Mechanical Characteristics
C
C
CM
LM
F
FM
www.irf.com
J
STG
CES
GE
D
D
θJC
θCS
θJA
@ T
@ T
@ T
@ T
@ T
C
C
C
C
C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C Maximum Power Dissipation
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref.Fig.C.T.5)
Clamped Inductive Load current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Junction-to-Case- IGBT
Case-to-Sink, flat, greased surface
Junction-to-Ambient (PCB Mounted,steady state)
Weight
TM
Parameter
Parameter
d
IRG4BC30FD-SPbF
G
g
n-channel
Min.
–––
–––
–––
–––
C
E
-55 to +150
2.0 (0.07)
Max.
Typ.
0.50
600
124
124
120
±20
100
–––
–––
D
31
17
12
42
2
Fast CoPack IGBT
Pak
CE(on) typ.
GE
CES
Max.
–––
–––
1.2
40
=
C
Units
Units
g (oz.)
°C/W
°C
W
V
A
V
1

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IRG4BC30FD-SPBF Summary of contents

Page 1

... Storage Temperature Range STG Thermal / Mechanical Characteristics R Junction-to-Case- IGBT θJC R Case-to-Sink, flat, greased surface θCS R Junction-to-Ambient (PCB Mounted,steady state) θJA Weight Wt www.irf.com IRG4BC30FD-SPbF G n-channel Parameter d Parameter Min. ––– ––– g ––– ––– Fast CoPack IGBT C CES = CE(on) typ ...

Page 2

... IRG4BC30FD-SPbF Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES ∆V /∆T Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆T Threshold Voltage temp. coefficient GE(th) J gfe Forward Transconductance I Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop ...

Page 3

... IRG4BC30FD-SPbF 3 ...

Page 4

... IRG4BC30FD-SPbF 4 www.irf.com ...

Page 5

... IRG4BC30FD-SPbF 5 ...

Page 6

... IRG4BC30FD-SPbF 6 www.irf.com ...

Page 7

... IRG4BC30FD-SPbF 7 ...

Page 8

... IRG4BC30FD-SPbF 430µF 80% of Vce - LM on off(diode 10% +Vg Vce 10% Ic Vcc 90 Vce tr td(on Same type device as +Vge D.U.T. D.U.T. Ic td(off) rr d(on) r d(off GATE VOLTAGE D.U.T. Ic +Vg DUT VOLTAGE AND CURRENT Vpk Ipk Ic t2 Eon = Vce DIODE REVERSE t2 RECOVERY ENERGY d(on) r 90% Vge ...

Page 9

... Fig.18e - Macro Waveforms for L 1000V 50V 6000µF 100V Fig Clamped Inductive Load Test Circuit www.irf.com IRG4BC30FD-SPbF Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT Figure 18a's D.U. VCC Fig Pulsed Collector Current Test Circuit VCC ICM 480µF ...

Page 10

... IRG4BC30FD-SPbF 2 2 UCDTÃDTÃ6IÃDSA$"TÃXDUC GPUÃ8P @Ã'!# 6TT@H7G@ ÃPIÃXXÃ!Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅGÅ 10 DIU@SI6UDPI6G S@8UDAD@S A$"T GPBP 6TT@H7G` GPUÃ Q6SUÃIVH7@S DIU@SI6UDPI6G S@8UDAD@S A$"T GPBP 6U@Ã8P @ QÃ2Ã @TDBI6U@TÃG@6 ÃÃAS@@ 6TT@H7G` `@6SÃ ...

Page 11

... CES GE ≤ ƒ „ …When mounted on 1" square PCB (FR-4 or G-10 Material). IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com IRG4BC30FD-SPbF 1.60 (.063) 1.50 (.059) 1.60 (.063) 4.10 (.161) 1.50 (.059) 3.90 (.153) 11.60 (.457) 11.40 (.449) 15 ...

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