IRG4BC30FD-SPBF International Rectifier, IRG4BC30FD-SPBF Datasheet
IRG4BC30FD-SPBF
Specifications of IRG4BC30FD-SPBF
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IRG4BC30FD-SPBF Summary of contents
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... R Case-to-Sink, flat, greased surface qCS R Junction-to-Ambient, typical socket mount qJA Wt Weight www.irf.com G TM ultrafast, n-cha nnel 300 (0.063 in. (1.6mm) from case) Min. ------ ------ ------ ----- ------ PD -91451B IRG4BC30FD Fast CoPack IGBT 600V CES V = 1.59V CE(on) typ 15V 17A TO-220AB Max. Units 600 31 17 120 ...
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... IRG4BC30FD Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Temperature Coeff. of Breakdown Voltage ---- /DT DV (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) /DT Temperature Coeff. of Threshold Voltage ---- DV GE(th Forward Transconductance fe I Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop ...
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... Frequency (kH z) Fig Typical Load Current vs. Frequency (Load Current = I of fundamental) RMS 15V µ IRG4BC30FD D uty cy cle: 50 125° sink G ate drive as s pecified Turn-on loss es inc lude effec ts of rev ers e rec overy Power D iss ipa tion = 21W 150° 25° ...
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... IRG4BC30FD ture (° Fig Maximum Collector Current vs. Case Temperature 0.2 0 0 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 15V G E 100 125 150 Fig Typical Collector-to-Emitter Voltage 0. cta lse D ura tio 15V µ 2.0 1 ...
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... Fig Typical Capacitance vs. Collector-to-Emitter Voltage 2. 480V 15V 25° 17A C 2.10 2.00 1.90 1. Gate Resistance ( G Fig Typical Switching Losses vs. Gate Resistance www.irf.com MHz SHORTED IRG4BC30FD 400V 17A Total Gate Charge (nC) g Fig Typical Gate Charge vs. Gate-to-Emitter Voltage 15V 480V C C 0.1 -60 -40 ...
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... IRG4BC30FD 8 150° 480V 15V G E 6.0 4.0 2.0 0 Collector-to-Emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current Fig Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 1000 100 100 T = 150° 125° 25° 0.4 0.8 1.2 1 lta 20V 125 °C ...
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... °C J 400 I = 12A F 200 100 /µ Fig Typical Stored Charge vs. di www.irf.com ° ° .0A F 1000 Fig Typical Recovery Current vs 24A F 1000 /dt f IRG4BC30FD 100 ° ° 24A 12A 6. 100 /µ 10000 ° °C J 1000 I = 6.0A F 100 I = 24A F 10 100 /µ ...
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... IRG4BC30FD 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode td(on) t1 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining d(on) 8 Same type device as D .U. .T. 90% 10 d(on) r d(off) f Fig. 18b - Ipk Fig. 18d - , t r 90% 10% t d(off d(on) ...
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... F 100 V www.irf.com D.U. 480V IRG4BC30FD 480V @25° ...
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... IRG4BC30FD Repetitive rating: V =20V; pulse width limited by maximum junction temperature (figure 20 =80%( =20V, L=10µ CES GE Pulse width £ 80µs; duty factor £ 0.1%. Pulse width 5.0µs, single shot. 10.54 (.415) 2.87 (.113) 10.29 (.405) 2.62 (.103) 6.47 (.255) 6.10 (.240 ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...