IXGT30N60B2D1 IXYS, IXGT30N60B2D1 Datasheet
IXGT30N60B2D1
Specifications of IXGT30N60B2D1
Related parts for IXGT30N60B2D1
IXGT30N60B2D1 Summary of contents
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... GE(th CES CE CES ± GES CE(sat © 2004 IXYS All rights reserved Advance Technical Data IXGH 30N60B2D1 IXGT 30N60B2D1 Maximum Ratings 600 = 1 MΩ 600 GE ±20 ± 150 = 10 Ω 190 -55 ... +150 150 -55 ... +150 300 1.13/10Nm/lb.in. Characteristic Values (T = 25°C, unless otherwise specified) J min ...
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... - 100 -di/dt = 100 A/µ thJC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max 1500 145 300 V 9 ...
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... Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage 4.2 3.9 3.6 3 48A C 3 24A 12A 2.7 2.4 2.1 1.8 1.5 1 Volts G E © 2004 IXYS All rights reserved 300 250 9V 200 7V 150 100 2.5 3 1.3 1.2 9V 1.1 7V 1.0 0.9 5V 0.8 0.7 2 2.5 3 ...
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... CE 400 300 200 I = 48A C 100 Ohms G IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 2.7 2.4 2.1 1.8 1.5 1.2 0.9 0.6 0.3 C 1.8 1.6 1.4 1 125º ...
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... T - Degrees Centigrade J Fig. 15. Capacitance 10000 MHz 1000 100 Volts C E 1.0 0.5 0.1 1 © 2004 IXYS All rights reserved 48A C 3 24A 12A 105 115 125 C ies C oes C res Fig. 16. Maxim um Transient Therm al Resistance 10 Pulse Width - milliseconds IXGH 30N60B2D1 IXGT 30N60B2D1 Fig ...
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... K/W 0.1 Z thJC 0.01 0.001 0.00001 0.0001 0.001 Fig. 23. Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 1000 T = 100° 300V R 800 ...