IXGT30N60B2D1 IXYS, IXGT30N60B2D1 Datasheet - Page 5

• Manufacturer Part Number: IXGT30N60B2D1
• Description: IGBT 600V 70A FRD TO-268
• Manufacturer: IXYS
• Series: HiPerFAST™r

Specifications of IXGT30N60B2D1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 15V, 24A
• Current - Collector (ic) (max): 70A
• Power - Max: 190W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 70
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 30
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.8
• Tfi, Typ, Tj=25°c, Igbt, (ns): 82
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.9
• Rthjc, Max, Igbt, (°c/w): 0.42
• If, Tj=110°c, Diode, (a): 30
• Rthjc, Max, Diode, (ºc/w): 0.9
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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10000
1000
100
220
200
180
160
140
120
100
10
1.0
0.1
80
0.5
25
0
1
t
t
R
V
V
d(off)
fi
Sw itching Tim e on Tem perature
GE
CE
35
Fig. 13. Dependence of Turn-Off
G
f = 1 MHz
-
5
= 5Ω
= 400V
= 15V
- - - - -
45
Fig. 15. Capacitance
T
10
J
55
- Degrees Centigrade
15
V
65
I
C E
C
= 12A
20
- Volts
24A
48A
75
85
25
Fig. 16. Maxim um Transient Therm al Resistance
95
30
C
C
C
105 115 125
ies
oes
res
I
10
C
= 48A
35
24A
12A
Pulse Width - milliseconds
40
15
12
9
6
3
0
0
V
I
I
C
G
CE
10
= 24A
= 10mA
= 300V
100
Fig. 14. Gate Charge
20
Q
G
- nanoCoulombs
30
IXGH 30N60B2D1
IXGT 30N60B2D1
40
50
60
1000
70