IXGT30N60B2D1 IXYS, IXGT30N60B2D1 Datasheet - Page 6

• Manufacturer Part Number: IXGT30N60B2D1
• Description: IGBT 600V 70A FRD TO-268
• Manufacturer: IXYS
• Series: HiPerFAST™r

Specifications of IXGT30N60B2D1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 15V, 24A
• Current - Collector (ic) (max): 70A
• Power - Max: 190W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 70
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 30
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.8
• Tfi, Typ, Tj=25°c, Igbt, (ns): 82
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.9
• Rthjc, Max, Igbt, (°c/w): 0.42
• If, Tj=110°c, Diode, (a): 30
• Rthjc, Max, Diode, (ºc/w): 0.9
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
Fig. 20. Dynamic parameters Q
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
Fig. 17. Forward current I
Fig. 20. Dynamic parameters Q
Z
Fig. 23. Transient thermal resistance junction to case
I
0.001
F
K
thJC
0.01
K/W
f
2.0
1.5
1.0
0.5
0.0
0.1
0.00001
A
60
50
40
30
20
10
0
1
0
0
T
versus T
T
VJ
VJ
versus T
=100°C
=150°C
40
1
I
RM
Q
r
VJ
0.0001
VJ
80
2
T
VJ
T
V
120
F
VJ
F
=25°C
versus V
3
°C
r
0.001
, I
V
r
, I
160
RM
RM
F
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
t
rr
Q
1000
Fig. 18. Reverse recovery charge Q
Fig. 21. Recovery time t
r
800
600
400
200
nC
90
80
70
60
ns
0
100
0.01
0
T
V
VJ
R
= 100°C
= 300V
200
versus -di
-di
F
/dt
I
I
I
F
F
F
400
= 60A
= 30A
= 15A
I
I
I
0.1
F
F
F
F
= 60A
= 30A
= 15A
-di
/dt
600
F
-di
/dt
T
V
VJ
t
F
R
/dt
= 100°C
= 300V
rr
A/µs
s
800
A/µs
versus
DSEP 29-06
1000
1000
1
r
I
V
RM
FR
Fig. 19. Peak reverse current I
Constants for Z
30
25
20
15
10
20
15
10
Fig. 22. Peak forward voltage V
A
5
0
V
5
0
1
2
3
0
0
i
T
I
t
T
V
F
fr
VJ
VJ
R
= 100°C
= 30A
= 100°C
= 300V
200
200
IXGH 30N60B2D1
IXGT 30N60B2D1
versus -di
and t
I
I
I
F
F
F
R
0.502
0.193
0.205
= 60A
= 30A
= 15A
400
400
thi
fr
thJC
(K/W)
versus di
V
FR
calculation:
600
600
6,534,343
F
/dt
di
-di
F
/dt
F
/dt
A/µs
A/µs
800
800
F
/dt
t
0.0052
0.0003
0.0162
i
6,583,505
(s)
1000
1000
RM
1.00
0.75
0.50
0.25
0.00
FR
µs
t
fr