GT10Q301(Q) Toshiba, GT10Q301(Q) Datasheet - Page 3

• Manufacturer Part Number: GT10Q301(Q)
• Description: IGBT DUAL 1200V 10A TO-3PN
• Manufacturer: Toshiba

Specifications of GT10Q301(Q)

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 10A
• Current - Collector (ic) (max): 10A
• Power - Max: 140W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

20
16
12
20
16
12
20
16
12
4
0
4
0
8
4
0
8
8
0
0
0
Common emitter
Tc = 25°C
Common emitter
Tc = 25°C
Common emitter
V CE = 5 V
Collector-emitter voltage V
Tc = 125°C
Gate-emitter voltage V
4
Gate-emitter voltage V
1
4
I C = 4 A
25
V
20
2
8
8
I
I
CE
C
C
– V
– V
−40
– V
CE
10
GE
15
GE
12
12
3
20
GE
GE
13
CE
(V)
(V)
V GE = 10 V
16
16
4
(V)
12
20
20
5
3
20
16
12
20
16
12
−60
8
4
0
8
4
0
4
3
2
1
0
0
0
Common emitter
Tc = −40°C
Common emitter
Tc = 125°C
Common emitter
V GE = 15 V
−20
Gate-emitter voltage V
Gate-emitter voltage V
4
4
Case temperature Tc (°C)
I C = 4 A
I C = 4 A
V
V
V
20
CE (sat)
8
8
CE
CE
– V
– V
10
10
GE
– Tc
GE
12
12
60
20
20
GE
GE
I C = 4 A
(V)
(V)
100
16
16
GT10Q301
20
10
2006-10-31
140
20
20