GT10Q301(Q) Toshiba, GT10Q301(Q) Datasheet - Page 5

• Manufacturer Part Number: GT10Q301(Q)
• Description: IGBT DUAL 1200V 10A TO-3PN
• Manufacturer: Toshiba

Specifications of GT10Q301(Q)

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 10A
• Current - Collector (ic) (max): 10A
• Power - Max: 140W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

3000
1000
300
100
100
0.5
0.3
0.1
30
10
50
30
10
20
16
12
3
1
4
0
5
3
1
0.1
8
0
1
I C max (pulsed)*
I C max (continuous)
*: Single nonrepetitive
Common emitter
V GE = 0
f = 1 MHz
Tc = 25°C
pulse Tc = 25°C
Curves must be
derated linearly with
increase in
temperature.
0.3
Tc= 125°C
3
Collector-emitter voltage V
Collector-emitter voltage V
DC operation
1
1
Forward voltage V
10
Safe Operating Area
3
2
30
C – V
I
F
– V
−40
10
25
100 μs*
CE
100
F
3
1 ms*
30
F
Common collector
V GE = 0
10 ms*
300
CE
CE
(V)
100
4
(V)
50 μs*
(V)
C oes
C res
1000
C ies
300
1000
3000
5
5
1000
800
600
400
200
100
100
0.5
0.3
0.1
30
10
50
30
10
0
3
1
5
3
1
0
0
1
T j ≤ 125°C
V GE = ±15 V
R G = 43 Ω
Common emitter
R L = 60 Ω
Tc = 25°C
t rr
I rr
3
Collector-emitter voltage V
2
20
V CE = 200 V
Forward current I
Gate charge Q
10
600
Reverse Bias SOA
4
V
CE
40
t
30
rr
, V
, I
400
GE
rr
6
– I
100
– Q
Common collector
di/dt = −200 A/μs
V GE = 0
60
G
F
F
G
(nC)
8
300
(A)
CE
: Tc = 25°C
: Tc = 125°C
80
(V)
10
1000
GT10Q301
2006-10-31
3000
100
12
20
16
12
8
4
0
1000
100
10