IGD06N60T Infineon Technologies, IGD06N60T Datasheet - Page 6

• Manufacturer Part Number: IGD06N60T
• Description: IGBT 600V 12A 88W TO252-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IGD06N60T

• Package / Case: DPak, TO-252 (5 leads + tab)
• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.05V @ 15V, 6A
• Current - Collector (ic) (max): 12A
• Power - Max: 88W
• Input Type: Standard
• Mounting Type: Surface Mount
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 175 C
• Continuous Collector Current Ic Max: 12 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: DPAK (TO-252)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 12.0 A
• Ic(max) @ 100°: 6.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IGD06N60TXT

Power Semiconductors
100ns
Figure 9. Typical switching times as a
Figure 11. Typical switching times as a
100ns
10ns
10ns
1ns
1ns
0A
t
t
t
t
t
f
d(on)
r
d(off)
f
t
t
d(on)
d(off)
T
function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
function of junction temperature
(inductive load, V
V
Dynamic test circuit in Figure E)
t
r
J
I
CE
GE
50°C
3A
,
C
,
JUNCTION TEMPERATURE
= 400V, V
= 0/15V, I
COLLECTOR CURRENT
6A
C
GE
100°C
= 6A, R
9A
= 0/15V, R
J
CE
=175°C,
= 400V,
12A
G
= 23Ω,
G
= 23Ω,
150°C
15A
6
TrenchStop® Series
Figure 10. Typical switching times as a
Figure 12. Gate-emitter threshold voltage as
100ns
10ns
6V
5V
4V
3V
2V
1V
0V
1ns
-50°C
t
t
f
d(off)
function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
a function of junction temperature
(I
T
C
CE
J
,
0°C
= 0.18mA)
JUNCTION TEMPERATURE
= 400V, V
R
G
,
GATE RESISTOR
50°C
GE
IGD06N60T
= 0/15V, I
J
=175°C,
100°C
December 06
C
= 6A,
t
d(on)
150°C
m ax.
m in.
typ.
t
r
q