IGD06N60T Infineon Technologies, IGD06N60T Datasheet - Page 7

no-image

IGD06N60T

Manufacturer Part Number
IGD06N60T
Description
IGBT 600V 12A 88W TO252-3
Manufacturer
Infineon Technologies
Series
TrenchStop™r
Datasheet

Specifications of IGD06N60T

Package / Case
DPak, TO-252 (5 leads + tab)
Igbt Type
Trench and Field Stop
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.05V @ 15V, 6A
Current - Collector (ic) (max)
12A
Power - Max
88W
Input Type
Standard
Mounting Type
Surface Mount
Configuration
Single
Collector- Emitter Voltage Vceo Max
600 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 175 C
Continuous Collector Current Ic Max
12 A
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Switching Frequency
TRENCHSTOP™ 2-20kHz
Package
DPAK (TO-252)
Vce (max)
600.0 V
Ic(max) @ 25°
12.0 A
Ic(max) @ 100°
6.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IGD06N60TXT

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IGD06N60T
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IGD06N60T
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Power Semiconductors
Figure 13. Typical switching energy losses
Figure 15. Typical switching energy losses
0,4mJ
0,3mJ
0,2mJ
0,1mJ
0,0mJ
0,6 mJ
0,5 mJ
0,4 mJ
0,3 mJ
0,2 mJ
0,1 mJ
0,0 mJ
E
E
E
0A
on
ts
*) E
off
*
*
*) E
T
as a function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
as a function of junction
temperature
(inductive load, V
V
Dynamic test circuit in Figure E)
due to diode recovery
50°C
due to diode recovery
J
I
CE
on
GE
,
C
on
,
JUNCTION TEMPERATURE
2A
=400V, V
and E
= 0/15V, I
COLLECTOR CURRENT
and E
ts
4A
ts
include losses
include losses
GE
C
100°C
=0/15V, R
= 6A, R
6A
J
CE
=175°C,
=400V,
G
8A
= 23Ω,
G
E
=23Ω,
off
150°C
E
10A
on
*
E
ts
*
7
TrenchStop® Series
Figure 14. Typical switching energy losses
Figure 16. Typical switching energy losses
0,5m J
0,4m J
0,3m J
0,2m J
0,1m J
0,0m J
0,4 mJ
0,3 mJ
0,2 mJ
0,1 mJ
0,0 mJ
200V
V
*) E
CE
as a function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
as a function of collector emitter
voltage
(inductive load, T
V
Dynamic test circuit in Figure E)
*) E
due to diode recovery
,
CE
COLLECTOR
GE
on
due to diode recovery
and E
on
= 400V, V
300V
= 0/15V, I
R
and E
G
,
GATE RESISTOR
ts
ts
include losses
include losses
-
EMITTER VOLTAGE
C
GE
IGD06N60T
400V
= 6A, R
= 0/15V, I
J
J
=175°C,
= 175°C,
G
= 23Ω,
500V
December 06
C
= 6A,
E
E
E
E
E
E
ts
off
on
on
off
*
ts
*
*
*
q

Related parts for IGD06N60T