IGP03N120H2 Infineon Technologies, IGP03N120H2 Datasheet
IGP03N120H2
Specifications of IGP03N120H2
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IGP03N120H2 Summary of contents
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... Turn off safe operating area 1200V, T 150 Gate-emitter voltage Power dissipation = Operating junction and storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Power Semiconductors IGP03N120H2, IGW03N120H2 P-TO-263-3-2 (D²-PAK) P-TO-220-3-1 (TO-263AB) (TO-220AB) http://www.infineon.com/igbt Package off j 0.15mJ P-TO-247 150 C 0.15mJ 150° ...
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... Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm collector connection. PCB is vertical without blown air. Power Semiconductors IGP03N120H2, IGW03N120H2 Symbol Conditions P-TO-220-3 P-TO-247-3-1 2 ...
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... Fall time Turn-on energy Turn-off energy Total switching energy Switching Energy ZVT, Inductive Load Parameter IGBT Characteristic Turn-off energy 2) Leakage inductance L and stray capacity C due to dynamic test circuit in figure E 3) Commutation diode from device IKP03N120H2 Power Semiconductors IGP03N120H2, IGW03N120H2 = Symbol Conditions = 00V ...
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... 60W 50W 40W 30W 20W 10W 0W 25°C 50°C 75°C 100° CASE TEMPERATURE C Figure 3. Power dissipation as a function of case temperature (T 150 C) j Power Semiconductors IGP03N120H2, IGW03N120H2 10A 1A 0,1A 100kHz ,01A 1V 10V , V COLLECTOR CE Figure 2. Safe operating area ( 12A 10A 125°C 25° ...
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... V COLLECTOR EMITTER VOLTAGE CE Figure 5. Typical output characteristics ( 12A 10A 8A =+150° =+25° GATE EMITTER VOLTAGE GE Figure 7. Typical transfer characteristics (V = 20V) CE Power Semiconductors IGP03N120H2, IGW03N120H2 10A 9A 8A =15V 12V 6A 10V COLLECTOR CE Figure 6. Typical output characteristics (T = 150 -50°C 0° JUNCTION TEMPERATURE j Figure 8. Typical collector-emitter ...
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... JUNCTION TEMPERATURE j Figure 11. Typical switching times as a function of junction temperature (inductive load 800V +15V/0V 3A dynamic test circuit in Fig.E) Power Semiconductors IGP03N120H2, IGW03N120H2 1000ns 100ns 10ns 1ns 0 4A Figure 10. Typical switching times as a function of gate resistor (inductive load 800V dynamic test circuit in Fig.E) ...
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... T JUNCTION TEMPERATURE j Figure 15. Typical switching energy losses as a function of junction temperature (inductive load 800V +15V/0V 3A dynamic test circuit in Fig.E ) Power Semiconductors IGP03N120H2, IGW03N120H2 0.7mJ due to diode recovery 0.6mJ 0.5mJ E off 0.4mJ 1 0.3mJ off 1 E 0.2mJ ...
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... GATE CHARGE Q GE Figure 17. Typical gate charge (I = 3A) C 1nF 100pF 10pF 0V 10V 20V , - V COLLECTOR EMITTER VOLTAGE CE Figure 18. Typical capacitance as a function of collector-emitter voltage ( 1MHz) GE Power Semiconductors IGP03N120H2, IGW03N120H2 20V 15V 10V , ( 0nC 10ms 100ms Figure 17. Typical gate charge (I = 3A) C 1000V 800V C ...
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... PULSE WIDTH p Figure 21. Typical turn off behavior, soft switching (V =15/0V, R =82Ω 150 Dynamic test circuit in Figure E) Power Semiconductors IGP03N120H2, IGW03N120H2 2.8 9 IGB03N120H2 Rev. 2, Mar-04 ...
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... TO-220AB TO-263AB (D 2 Pak) Power Semiconductors IGP03N120H2, IGW03N120H2 dimensions [mm] symbol min A 9.70 B 14.88 C 0.65 D 3.55 E 2.60 F 6.00 G 13.00 H 4.35 K 0.38 L 0.95 M 2.54 typ. N 4.30 P 1.17 T 2.30 [mm] symbol min A 9.80 B 0.70 C 1.00 D 1.03 E 2.54 typ. F 0.65 G 5.08 typ. H 4.30 K 1.17 L 9. typ ...
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... TO-247AC Power Semiconductors IGP03N120H2, IGW03N120H2 [mm] symbol min A 4.78 B 2.29 C 1.78 D 1.09 E 1.73 F 2.67 G 0.76 max H 20.80 K 15.65 L 5.21 M 19.81 N 3.560 3. 6.12 dimensi ons [mm] symbol min 11 IGB03N120H2 dimensions symbol min 0.76 max G H 20. 15. 5. 19. 3.560 N 3. 6.12 Q dimensi ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors IGP03N120H2, IGW03N120H2 i Figure C. Definition of diodes switching characteristics ( Figure D. Thermal equivalent circuit ½ L DUT (Diode Figure E. Dynamic test circuit Leakage inductance L = 180nH, Stray capacitor C = 40pF, Relief capacitor C ZVT switching) 12 IGB03N120H2 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors IGP03N120H2, IGW03N120H2 13 IGB03N120H2 ...