IGP03N120H2 Infineon Technologies, IGP03N120H2 Datasheet - Page 9

• Manufacturer Part Number: IGP03N120H2
• Description: IGBT 1200V 9.36A 62.5W TO220-3
• Manufacturer: Infineon Technologies

Specifications of IGP03N120H2

• Package / Case: TO-220-3 (Straight Leads)
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 3A
• Current - Collector (ic) (max): 9.6A
• Power - Max: 62.5W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 9.6 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Switching Frequency: HighSpeed2 30-100 kHz
• Package: TO-220
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 9.6 A
• Ic(max) @ 100°: 3.9 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Power Semiconductors
800V
600V
400V
200V
0V
Figure 21. Typical turn off behavior, soft
switching
(V
Dynamic test circuit in Figure E)
GE
0.0
=15/0V, R
0.4
0.8
t
p
,
G
PULSE WIDTH
1.2
=82Ω, T
1.6
2.0
j
= 150 C,
2.4
2.8
3A
2A
1A
0A
IGP03N120H2,
IGW03N120H2
9
IGB03N120H2
Rev. 2, Mar-04